Engineering the interface characteristics on the enhancement of field electron emission properties of vertically aligned hexagonal boron nitride nanowalls

Abstract

Phone: þ32 11 268875, Fax: þþ32 11 268899Utilization of Au and nanocrystalline diamond (NCD) as interlayers noticeably modifies the microstructure and field electron emission (FEE) properties of hexagonal boron nitride nanowalls (hBNNWs) grown on Si substrates. The FEE properties of hBNNWs on Au could be turned on at a low turnon field of 14.3 V mm À1 , attaining FEE current density of 2.58 mA cm À2 and life-time stability of 105 min. Transmission electron microscopy reveals that the Au-interlayer nucleates the hBN directly, preventing the formation of amorphous boron nitride (aBN) in the interface, resulting in enhanced FEE properties. But Au forms as droplets on the Si substrate forming again aBN at the interface. Conversely, hBNNWs on NCD shows superior in life-time stability of 287 min although it possesses inferior FEE properties in terms of larger turn-on field and lower FEE current density as compared to that of hBNNWs-Au. The uniform and continuous NCD film on Si also circumvents the formation of aBN phases and allows hBN to grow directly on NCD. Incorporation of carbon in hBNNWs from the NCD-interlayer improves the conductivity of hBNNWs, which assists in transporting the electrons efficiently from NCD to hBNNWs that results in better field emission of electrons with high life-time stability.

On the Origin of Diamond Plates Deposited at Low Temperature

“…The growth of diamond thin films, especially at low temperatures, is attracting increasingly more interest due to its suitability for a wide variety of applications, such as biosensing, lubricity, or corrosion protective layers. In addition, diamond nanostructures are being considered for nanoapplications; i.e., diamond nanowires, plates, or needles are promising materials for applications, such as field and thermionic emitters, , nanophotonics, and drug delivery systems . Despite interesting properties, such as high hardness, good thermal conductivity, biocompatibility, chemical hardness, and doping possibility, control over the morphology and crystal orientation remains challenging.…”

Growth mechanisms of hBN crystalline nanostructures with rf sputtering deposition: challenges, opportunities, and future perspectives

“…The formation of these phases is largely dependent on the density of defects that may be created during fabrication. The tBN and aBN phases have also been studied quite meticulously in our studies [35][36][37][38][39]. Meanwhile, the hard phases of BN are formed by sp 3 bonding and have a higher density compared to the soft ones.…”

“…These parameters directly affect the nucleation and growth of BN materials on the substrate surface. Because of that we fixed the above parameters, in order to stabilize the hBN sample fabrication conditions [35][36][37][38][39]. At the same time, we changed the external conditions such as the distance from the substrate surface to the BN target (d), substrate temperature (T sub ), tilting substrate surface in respect of the virtual line from the BN target center to the substrate (α) and the substrate materials (Si, NCD, Cr/ Au) for the purpose of creating hBN has the desired quality and orientation.…”

Stable Field Electron Emission and Plasma Illumination from Boron and Nitrogen Co‐Doped Edge‐Rich Diamond‐Enhanced Carbon Nanowalls

“…[5] Nevertheless, carbon nanomaterials such as nanotubes, nanoflakes, or even graphene have been used as extraordinary electron sources. [6] Their FEE characteristics are superior, [7] but they show poor stability and a short lifetime, [8] which prevents them from becoming a practical material for device applications. Basically, the FEE process involves two steps including the electron transporting into the emitting sites and the electron tunneling into vacuum from Superior field electron emission (FEE) characteristics are achieved in edge-rich diamond-enhanced carbon nanowalls (D-ECNWs) grown in a single-step chemical vapor deposition process co-doped with boron and nitrogen.…”