Field-driven single domain wall motion in ferromagnetic nanowires

Abstract

A domain wall trap structure was found which is suitable for the field-driven single DW propagation between two narrow nanowires.

Exploring characteristics of the corner sections of a domain wall trap nanostructure with the two-field direction method

“…2,[4][5][6][7][8][9][10][11][12] These parameters can be engineered to either allow or pin DW movements in those structures. 2,[4][5][6][7][9][10][11][12][13][14] To fabricate such devices for the real life applications, a further understanding of relative parameters that link to characteristics of DW motion is really important. As mentioned in our previous work and by other authors, a domain wall trap (DWT) structure and its characteristics were mainly studied.…”

“…As mentioned in our previous work and by other authors, a domain wall trap (DWT) structure and its characteristics were mainly studied. 2,4,[13][14][15] Among a number of DWT-like nanostructures which were investigated, a new geometry has been created in our previous work. 14 With this design, a single DW can be created at a certain location in the given structure, i.e.…”

“…2,4,[13][14][15] Among a number of DWT-like nanostructures which were investigated, a new geometry has been created in our previous work. 14 With this design, a single DW can be created at a certain location in the given structure, i.e. corners and/or nanowires, the created DW is then propagated in the structure using a two-eld direction method.…”

“…corners and/or nanowires, the created DW is then propagated in the structure using a two-eld direction method. 14 The composed geometry consists of two horizontal nanowires and three other 90 -tilted ones. Each nanowire has an in-plane dimension of 200 Â 1000 nm 2 .…”

“…The structure was directly fabricated and characterized using focused-ion-beam (FIB) and Lorentz transmission electron microscopy (LTEM) techniques, respectively. 14,17,18 Prior to each DW propagation, a continuous biased-eld or creation eld was applied with an unchanged angle of u ¼ 60 to the two horizontal nanowires, as shown in the inset of Fig. 1.…”