As the black cesium lead iodide (CsPbI3) tends to transit into a yellow δ-phase at ambient, it is imperative to develop a stabilized black phase for photovoltaic applications. Herein, we report a distorted black CsPbI3 film by exploiting the synergistic effect of hydroiodic acid (HI) and phenylethylammonium iodide (PEAI) additives. It is found that the HI induces formation of hydrogen lead iodide (HPbI3+x), an intermediate to the distorted black phase with appropriate band gap of 1.69 eV; while PEAI provides nucleation for optimized crystallization. More importantly, it stabilizes the distorted black phase by hindering phase transition via its steric effects. Upon optimization, we have attained solar cell efficiency as high as 15.07%. Specifically, the bare cell without any encapsulation shows negligible efficiency loss after 300 h of light soaking. The device keeps 92% of its initial cell efficiency after being stored for 2 months under ambient conditions.
It is imperative to develop a large-aspect-ratio grainbased thin film with low trap density for high-performance inorganic perovskite CsPbI 2 Br solar cells. Herein, by using Mn 2+ ion doping to modulate film growth, we achieved CsPbI 2 Br grains with aspect ratios as high as 8. It is found that Mn 2+ ions insert into the interstices of the CsPbI 2 Br lattice during the growth process, leading to suppressed nucleation and a decreased growth rate. The combination aids in the achievement of larger CsPbI 2 Br crystalline grains for increased J SC values as high as 14.37 mA/cm 2 and FFs as large as 80.0%. Moreover, excess Mn 2+ ions passivate the grain boundary and surface defects, resulting in effectively decreased recombination loss with improved hole extraction efficiency, which enhances the built-in electric field and hence increases V OC to 1.172 V. As a result, the champion device achieves stabilized efficiency as high as 13.47%, improved by 13% compared with only 11.88% for the reference device.
All‐inorganic CsPbBrI2 perovskite has great advantages in terms of ambient phase stability and suitable band gap (1.91 eV) for photovoltaic applications. However, the typically used structure causes reduced device performance, primarily due to the large recombination at the interface between the perovskite, and the hole‐extraction layer (HEL). In this paper, an efficient CsPbBrI2 perovskite solar cell (PSC) with a dimensionally graded heterojunction is reported, in which the CsPbBrI2 material is distributed within bulk–nanosheet–quantum dots or 3D–2D–0D dimension‐profiled interface structure so that the energy alignment is optimized in between the valence and conduction bands of both CsPbBrI2 and the HEL layers. Specifically, the valence‐/conduction‐band edge is leveraged to bend with synergistic advantages: the graded combination enhances the hole extraction and conduction efficiency with effectively decreased recombination loss during the hole‐transfer process, leading to an enhanced built‐in electric field, hence a high VOC of as much as 1.19 V. The profiled structure induces continuously upshifted energy levels, resulting in a higher JSC of as much as 12.93 mA cm−2 and fill factor as high as 80.5%, and therefore record power conversion efficiency (PCE) of 12.39%. As far as it is known, this is the highest PCE for CsPbBrI2 perovskite‐based PSC.
Here, a high-performance graded bandgap structure-based solar cell was designed and demonstrated, comprising a CsPbI 2 Br bottom cell and a CsPbI 3 QD top cell. Several optimizations were conducted to boost the device performance. As a result, the extended photoresponse, high carrier mobility, and well-matched energy levels afford a record power conversion efficiency of 14.45%, coupled with a high J SC of 15.25 mA/cm 2 . The result shows that optical and energy-band manipulation is an effective approach for improving the performance of inorganic perovskite solar cells.
All‐inorganic perovskite CsPbI3 quantum dots (QDs) offer much better stability for photovoltaic applications. Unfortunately, their cell efficiencies are hindered by the low carrier transport efficiency of QD‐assembled films. In addition, agglomeration‐induced phase change of QDs poses another problem for material and device degradation. Herein, the use of µ‐graphene (µGR) to crosslink QDs to form µGR/CsPbI3 film is demonstrated. It is found that the resultant QDs film provides not only an effective channel for carrier transport, as witnessed by much improved conductivity but also significantly better stability against moisture, humidity, and high temperature stresses. The µGR/CsPbI3 based solar cell shows increased device performance. More specifically, compared to the solar cell without the µGR treatment, VOC is improved to 1.18 from 1.16 V, JSC to 13.59 from 13.17 mA cm−2, and FF to 72.6 from 68.1%, and overall power conversion efficiency to as high as 11.40 from 10.41%, a 12% increase. In addition, the instability originating from the thermal/moisture‐induced QD agglomeration is also greatly suppressed by the µGR crosslinking. The optimized device retains >98% of its initial efficiency after being stored in N2 atmosphere for one month. Importantly, under 60% humidity and 100 °C thermal stresses, the µGR/CsPbI3 devices show much better stability.
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