Graded Bandgap CsPbI2+Br1− Perovskite Solar Cells with a Stabilized Efficiency of 14.4%

Abstract

Here, a high-performance graded bandgap structure-based solar cell was designed and demonstrated, comprising a CsPbI 2 Br bottom cell and a CsPbI 3 QD top cell. Several optimizations were conducted to boost the device performance. As a result, the extended photoresponse, high carrier mobility, and well-matched energy levels afford a record power conversion efficiency of 14.45%, coupled with a high J SC of 15.25 mA/cm 2 . The result shows that optical and energy-band manipulation is an effective approach for improving the performance of inorganic perovskite solar cells.

14.1% CsPbI3 Perovskite Quantum Dot Solar Cells via Cesium Cation Passivation

“…[17] Meanwhile, the past decade has witnessed unprecedented success of organicinorganic hybrid perovskites in PV applications, with the reported PCE of perovskite solar cells exceeding 23%. [29][30][31][32][33][34][35][36][37][38] Among these all-inorganic perovskite materials, α-CsPbI 3 exhibits an ideal optical bandgap (E g ) of 1.73 eV for PV applications. [29][30][31][32][33][34][35][36][37][38] Among these all-inorganic perovskite materials, α-CsPbI 3 exhibits an ideal optical bandgap (E g ) of 1.73 eV for PV applications.…”

Gradient Energy Band Driven High‐Performance Self‐Powered Perovskite/CdS Photodetector

“…This concept provides a new platform for designing high-performance optoelectronic devices. [24] In p-i-n structured devices, [25][26][27][28] graded composition (bandgap) is basically used in the main photosensitive layer, for which the narrow bandgap region increases the absorption wavelength range, the large bandgap results in a high voltage output, and graded bandgap structure promotes the carriers transport. [22] Compared to the homogeneously doped BiVO 4 , the continuous built-in band bending induces the directional transfer of photogenerated holes from core to surface and thus increases the carrier separation efficiency to 60%.…”

“…For example, Krol and co-workers fabricated the gradient W-doped BiVO 4 as a photoanode of photoelectrochemical cell. [24] In p-i-n structured devices, [25][26][27][28] graded composition (bandgap) is basically used in the main photosensitive layer, for which the narrow bandgap region increases the absorption wavelength range, the large bandgap results in a high voltage output, and graded bandgap structure promotes the carriers transport. Tailoring the gradient bandgap from 0.35 to 1.42 eV, Pan and co-workers synthesized InAs x P 1-x nanosheets for band-selective infrared photodetectors.…”

Anorganische CsPbX3‐Perowskit‐Solarzellen: Fortschritte und Perspektiven

“…[186] und [188]) erzeugten ein günstiges elektrisches Feld in der Zelle,e inhergehend mit Abbildung 9. a) Zellarchitektur, Energiediagramme und Querschnitt-SEM-Bild eines CsPbI 2 Br-Perowskitfilms auf SnO 2 /ZnO. [192] Copyright 2018, Elsevier Inc. effektiv verringerten Rekombinationsverlustenu nd verbesserten Lochextraktionseffizienzen. [184] Copyright 2018, Wiley-VCH.…”

“…[192] Da CsPbI 2 Br Licht von 300-650 nm absorbiert und CsPbI 3 -QD-Filme Licht von 300-700 nm absorbieren, fungiert die Kombination wie ein zwischenschichtfreies,p arallel geschaltetes,d oppellagiges Solarelement. Im ersten Fall wird das Konzept der parallelen Stapelung von Zellen mit unterschiedlichen Bandlücken genutzt, um das Absorptionsspektrum zu verbreitern und den Kurzschlussstrom J sc zu erhçhen (begleitet allerdings von einem gewissen Rückgang des V OC -Wertes der Zelle mit hçherem V OC ).…”