Nonlinear absorption (NLA) of hydrogenated nanocrystalline silicon (nc-Si:H) has been investigated through the open aperture Z-scan method for the photon energy of the incident irradiance slightly less than the bandgap of the sample. NLA responses have been observed to be highly sensitive to the wavelength and intensity of the incident irradiance as well as to the bandgap of the sample, indicating greatly tunable NLA of nc-Si:H. The band tail of nc-Si:H appears to play a crucial role in such NLA responses.
Nonlinear refraction (NLR) of hydrogenated nanocrystalline silicon (nc-Si:H) has been investigated through the close aperture Z-scan method. We demonstrate a significant NLR and a unique feature of controllable NLR characteristics between saturable and Kerr NLR with the incident photon energy. We numerically evaluate the proportion of these two mechanisms in different wavelengths by a modified NLR equation. The band tail of nc-Si:H appears to play a crucial role in such NLR responses.
In this letter, asymmetric simple exclusion processes with off-ramp on the boundaries have been studied by asymmetric simple exclusion processes (ASEPs). In this model, particles can only detach from a single off-ramp on the boundaries of the system. The phase diagrams and density profiles are calculated by approximate mean field theory and have shown good agreement with the extensive Monte Carlo computer simulations.
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