In this article, a low-power, radiation-hard frontend circuit for monolithic pixel sensors, designed to meet the requirements of low noise and low pixel-to-pixel variability, the key features to achieve high detection efficiencies, is presented.
The MALTA family of depleted monolithic pixel sensors produced in TowerJazz 180 nm CMOS technology target radiation hard applications for the HL-LHC and beyond. Several process modifications and front-end improvements have resulted in radiation hardness >1015 1 MeV neq/cm2 and time resolution below 2 ns, with uniform charge collection and efficiency across the pixel of size 36.4 × 36.4 µm2 with small collection electrode. This contribution will present the comparison of samples produced on high-resistivity epitaxial silicon with Czochralski substrates, before and after neutron irradiation, and results from MALTA2 with a new cascoded front-end flavour that further reduces the RTS noise.
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