Radiation hardness and timing performance in MALTA monolithic pixel sensors in TowerJazz 180 nm

Rijnbach, Milou van; Allport, P. P.; Tortajada, Ignacio Asensi; Berdalovic, I.; Bortoletto, D.; Buttar, C. M.; Cardella, R.; Dachs, F.; Dao, V.; Denizli, H.; Dobrijević, Dominik; Dyndał, M.; Flores, Leyre; Freeman, P. M.; Gabrielli, A.; LeBlanc, M.; Oyulmaz, Kaan Yüksel; Pernegger, H.; Piro, F.; Riedler, P.; Sandaker, H.; Solans, C. A.; Snoeys, W.; Suligoj, Tomislav; Torres, J.; Worm, Steven

doi:10.1088/1748-0221/17/04/c04034

Cited by 6 publications

(3 citation statements)

References 6 publications

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“…While there is no realization that meets all our target specifications, Tower Semiconductor imaging technology is very promising. The ALICE collaboration along with the CERN WP1.2 have optimized such sensors in CMOS imaging 180 nm and 65 nm technologies over a decade [5,6], achieving a very low sensor capacitance in the order of a few fF, while maintaining a very good efficiency, even at high levels of irradiation up to 10 15 1 MeV 𝑛 eq /cm 2 . This technology also offers the possibility of wafer scale stitched sensors, which is the object of an R&D effort for the ITS3 upgrade [7].…”

Section: Technology Choicementioning

confidence: 99%

NAPA-p1: monolithic nanosecond timing pixel for large area sensors, designed for future e ⁺ e ^- colliders

Habib,

Bakalis,

Brau

et al. 2024

J. Inst.

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NAPA-p1 is a prototype Monolithic Active Pixel Sensor 'MAPS' developed as a first iteration towards meeting the detectors general requirements for future e + e - colliders. Long-term objective is to develop a wafer-scale sensor in MAPS with an area ∼ 10 cm × 10 cm. This article presents the motivations for the design choices of NAPA-p1, translating the physics requirement into circuit specifications. Simulations show a pixel jitter of < 400 ps-rms and an equivalent noise charge of 13 e -rms with an average power consumption of 1.15 mW/cm2 assuming a 1% duty cycle, meeting the target specifications. The prototype is designed in 65 nm CMOS imaging technology, with dimensions of 1.5 mm × 1.5 mm and a pixel pitch of 25 μm. The prototype chip has been fabricated and characterization results will be available soon.

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Section: Technology Choicementioning

confidence: 99%

NAPA-p1: monolithic nanosecond timing pixel for large area sensors, designed for future e ⁺ e ^- colliders

Habib,

Bakalis,

Brau

et al. 2024

J. Inst.

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“…The MALTA sensor bench tests include threshold and noise scan and hit occupancy studies with and without a 90 Sr source [10]. A new version of the MALTA sensor: MALTA2 [11] has been recently produced and characterized with beam tests at CERN. Better than 2 ns timing resolution has been obtained by the MALTA2 sensor.…”

Section: Eic Silicon Detector Technology and Randd Statusmentioning

confidence: 99%

Silicon detector R$\&$D for the future Electron-Ion Collider

2023

Preprint

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The high-luminosity high-energy Electron-Ion Collider (EIC) to be built at Brookhaven National Laboratory (BNL) will provide a clean environment to study several fundamental questions in the high energy and nuclear physics fields. A high granularity and low material budget silicon vertex and tracking detector is required to provide precise measurements of primary and displaced vertex and track reconstruction with good momentum and spatial resolutions. The reference design of the EIC silicon vertex and tracking detector includes the Monolithic Active Pixel Sensor (MAPS) based vertex and tracking subsystem and the AC-Coupled Low Gain Avalanche Diode (AC-LGAD) based outer tracker, and it has the track reconstruction capability in the pseudorapidity region of -3.5 to 3.5 with full azimuthal coverage. Further detector geometry optimization with a new magnet based on the EIC project detector reference design are being performed by the newly formed ePIC collaboration. The latest ePIC vertex and tracking detector geometry and its performance evaluated in simulation will be presented. Details of the EIC silicon vertex and tracking detector R&D, which include the proposed detector technologies, prototype sensor characterization and detector mechanical design will be discussed as well.

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“…The efficiency decrease can be understood through electric field strength simulation at the pixel boundaries. With increasing bias voltage -14 - STD, S2, 1E15 @ -50V STD, S3, 1E15 @ -50V NGAP, S2, 1E15 @ -50V NGAP, S3, 1E15 @ -50V XDPW, S2, 1E15 @ -50V XDPW, S3, 1E15 @ -50V Sensor efficiency for 1 × 10 15 n eq /cm 2 and 2 × 10 15 n eq /cm 2 irradiated epitaxial and Czochralski sensors with n − gap as a function of threshold [23].…”

Section: Jinst 18 P09018mentioning

confidence: 99%

MALTA-Cz: a radiation hard full-size monolithic CMOS sensor with small electrodes on high-resistivity Czochralski substrate

Pernegger,

Allport,

Berlea

et al. 2023

J. Inst.

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Depleted Monolithic Active Pixel Sensor (DMAPS) sensors developed in the Tower Semiconductor 180 nm CMOS imaging process have been designed in the context of the ATLAS ITk upgrade Phase-II at the HL-LHC and for future collider experiments. The “MALTA-Czochralski (MALTA-Cz)” full size DMAPS sensor has been developed with the goal to demonstrate a radiation hard, thin CMOS sensor with high granularity, high hit-rate capability, fast response time and superior radiation tolerance. The design targets radiation hardness of > 1015 (1 MeV) neq/cm2 and 100 Mrad TID. The sensor shall operate as tracking sensor with a spatial resolution of ≈ 10 μm and be able to cope with hit rates in excess of 100 MHz/cm2 at the LHC bunch crossing frequency of 40 MHz. The 512 × 512 pixel sensor uses small collection electrodes (3.5 μm) to minimize capacitance. The small pixel size (36.4 × 36.4 μm2) provides high spatial resolution. Its asynchronous readout architecture is designed for high hit-rates and fast time response in triggered and trigger-less detector applications. The readout architecture is designed to stream all hit data to the multi-channel output which allows an off-sensor trigger formation and the use of hit-time information for event tagging. The sensor manufacturing has been optimised through process adaptation and special implant designs to allow the manufacturing of small electrode DMAPS on thick high-resistivity p-type Czochralski substrate. The special processing ensures excellent charge collection and charge particle detection efficiency even after a high level of radiation. Furthermore the special implant design and use of a Czochralski substrate improves the sensor's time resolution. This paper presents a summary of sensor design optimisation through process and implant choices and TCAD simulation to model the signal response. Beam and laboratory test results on unirradiated and irradiated sensors have shown excellent detection efficiency after a dose of 2 × 1015 1 MeV neq/cm2. The time resolution of the sensor is measured to be σ = 2 ns.

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Radiation hardness and timing performance in MALTA monolithic pixel sensors in TowerJazz 180 nm

Cited by 6 publications

References 6 publications

NAPA-p1: monolithic nanosecond timing pixel for large area sensors, designed for future e ⁺ e ^- colliders

NAPA-p1: monolithic nanosecond timing pixel for large area sensors, designed for future e ⁺ e ^- colliders

Silicon detector R$\&$D for the future Electron-Ion Collider

MALTA-Cz: a radiation hard full-size monolithic CMOS sensor with small electrodes on high-resistivity Czochralski substrate

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Radiation hardness and timing performance in MALTA monolithic pixel sensors in TowerJazz 180 nm

Cited by 6 publications

References 6 publications

NAPA-p1: monolithic nanosecond timing pixel for large area sensors, designed for future e + e - colliders

NAPA-p1: monolithic nanosecond timing pixel for large area sensors, designed for future e + e - colliders

Silicon detector R$\&$D for the future Electron-Ion Collider

MALTA-Cz: a radiation hard full-size monolithic CMOS sensor with small electrodes on high-resistivity Czochralski substrate

Contact Info

Product

Resources

About

NAPA-p1: monolithic nanosecond timing pixel for large area sensors, designed for future e ⁺ e ^- colliders

NAPA-p1: monolithic nanosecond timing pixel for large area sensors, designed for future e ⁺ e ^- colliders