This paper presents a batteryless system-on-chip (SoC) that operates off energy harvested from indoor solar cells and/or thermoelectric generators (TEGs) on the body. Fabricated in a commercial 0.13 μW process, this SoC sensing platform consists of an integrated energy harvesting and power management unit (EH-PMU) with maximum power point tracking, multiple sensing modalities, programmable core and a low power microcontroller with several hardware accelerators to enable energy-efficient digital signal processing, ultra-low-power (ULP) asymmetric radios for wireless transmission, and a 100 nW wake-up radio. The EH-PMU achieves a peak end-to-end efficiency of 75% delivering power to a 100 μA load. In an example motion detection application, the SoC reads data from an accelerometer through SPI, processes it, and sends it over the radio. The SPI and digital processing consume only 2.27 μW, while the integrated radio consumes 4.18 μW when transmitting at 187.5 kbps for a total of 6.45 μW.
We propose a fully on-chip CMOS temperature sensor in which a sub-threshold (sub-V T) proportional-to-absolute-temperature (PTAT) current element starves a current-controlled oscillator (CCO). Sub-V T design enables ultra-low-power operation of this temperature sensor. However, such circuits are highly sensitive to process variations, thereby causing varying circuit currents from die to die. We propose a bit-weighted current mirror (BWCM) architecture to resist the effect of process-induced variation in the PTAT current. The analog core constituting the PTAT, the CCO, and the BWCM is operational down to 0.2 V supply voltage. A digital block operational at 0.5 V converts the temperature information into a digital code that can be processed and used by other components in a system-on-chip (SoC). The proposed temperature sensor system also supports resolution-power trade-off for Internet-of-things (IoT) applications with different sampling rates and energy needs. The system power consumption is 23 nW and the maximum temperature inaccuracy is +1.5/´1.7˝C from 0˝C to 100˝C with a two-point calibration. The temperature sensor system was designed in a 130 nm CMOS technology and its total area is 250ˆ250 µm 2 .
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