“…The above components are described in detail in this section. [10]: it consists of a sub-VT PTAT current source, a bit-weighted current mirror, a current controlled oscillator and a digital block. (Based on "A 23 nW CMOS Ultra-Low Power Temperature Sensor Operational from 0.2 V", by Divya Akella Kamakshi, Aatmesh Shrivastava, and Benton H. Calhoun, which appeared in SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2015 IEEE, Rohnert Park, CA, 2015, pp.…”