Atomic layer deposition (ALD) is a vapour-phase deposition technique capable of depositing high quality, uniform and conformal thin films at relatively low temperatures. These outstanding properties can be employed to face processing challenges for various types of next-generation solar cells; hence, ALD for photovoltaics (PV) has attracted great interest in academic and industrial research in recent years. In this review, the recent progress of ALD layers applied to various solar cell concepts and their future prospects are discussed. Crystalline silicon (c-Si), copper indium gallium selenide (CIGS) and dye-sensitized solar cells (DSSCs) benefit from the application of ALD surface passivation layers, buffer layers and barrier layers, respectively. ALD films are also excellent moisture permeation barriers that have been successfully used to encapsulate flexible CIGS and organic photovoltaic (OPV) cells. Furthermore, some emerging applications of the ALD method in solar cell research are reviewed. The potential of ALD for solar cells manufacturing is discussed, and the current status of high-throughput ALD equipment development is presented. ALD is on the verge of being introduced in the PV industry and it is expected that it will be part of the standard solar cell manufacturing equipment in the near future.

The deposition of Pd and Pt nanoparticles by atomic layer deposition (ALD) has been studied extensively in recent years for the synthesis of nanoparticles for catalysis. For these applications, it is essential to synthesize nanoparticles with well-defined sizes and a high density on large-surface-area supports. Although the potential of ALD for synthesizing active nanocatalysts for various chemical reactions has been demonstrated, insight into how to control the nanoparticle properties (i.e. size, composition) by choosing suitable processing conditions is lacking. Furthermore, there is little understanding of the reaction mechanisms during the nucleation stage of metal ALD. In this work, nanoparticles synthesized with four different ALD processes (two for Pd and two for Pt) were extensively studied by transmission electron spectroscopy. Using these datasets as a starting point, the growth characteristics and reaction mechanisms of Pd and Pt ALD relevant for the synthesis of nanoparticles are discussed. The results reveal that ALD allows for the preparation of particles with control of the particle size, although it is also shown that the particle size distribution is strongly dependent on the processing conditions. Moreover, this paper discusses the opportunities and limitations of the use of ALD in the synthesis of nanocatalysts.

Plasma-assisted atomic layer deposition (ALD) processes were developed for the deposition of platinum films at room temperature. High-quality, virtually pure films with a resistivity of 18–24 μΩ cm were obtained for processes consisting of MeCpPtMe3 dosing, O2 plasma exposure, and H2 gas or H2 plasma exposure. The H2 pulses were used to reduce the PtO x that is otherwise deposited at low substrate temperatures. It is shown that the processes enable the deposition of Pt on polymer, textile, and paper substrates, which is a significant result as it demonstrates the broad application range of Pt ALD, including applications involving temperature-sensitive materials.

Atomic layer deposition (ALD) is used to deposit Pt nanoparticles at low temperature (25–150 °C) to fabricate highly transparent counter electrodes (CEs) for flexible dye‐sensitized solar cells (DSCs). The Pt nanoparticles (NPs) are deposited for different number of ALD cycles on indium tin oxide (ITO)/polyethylene naphthalate (PEN) substrates. Rutherford backscattering spectroscopy (RBS) and transmission electron microscopy (TEM) are used to assess the Pt NP loading, density, and size. There is a trade‐off between transparency and catalytic activity of the CE, and the best cell performances of back‐side‐illuminated DSCs (≈3.7% efficiency) are achieved for Pt ALD at temperatures in the range of 100–150 °C, even though deposition at 25 °C is also viable. The best cell produced with ALD platinized CE (100 cycles at 100 °C) outperforms the reference cells fabricated with electrodeposited and sputtered Pt CEs, with relative improvements in efficiency of 19% and 29%, respectively. In addition, these parameters are used to fabricate a large area CE for a sub‐module (active area of 17.6 cm2), resulting in an efficiency of 3.1%, which demonstrates the scalability of the process.

The doping efficiency and hence the electrical properties of atomic layer deposited ZnO can be improved by using a novel, safer boron precursor.