Atomic layer deposition of B-doped ZnO using triisopropyl borate as the boron precursor and comparison with Al-doped ZnO

Garcia-Alonso, Diana; Potts, Stephen E.; Helvoirt, Cristian A. A. van; Verheijen, Marcel A.; Kessels, W.M.M.

doi:10.1039/c4tc02707h

Cited by 54 publications

(28 citation statements)

References 122 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…12 The ZnO:B films were prepared in a similar way with varying m, using triisopropyl borate (TIB) and H 2 O as precursors during the dopant cycle. 13 Hydrogen was incorporated in the ZnO:H films by remote plasma treatments. 16 Note that the highly doped ZnO films already have been prepared in highthroughput spatial ALD reactors that are designed for high volume manufacturing in photovoltaic industries.…”

Section: Methodsmentioning

confidence: 99%

“…The refractive index of n ∼ 2 at 2 eV makes the ZnO films of 60−80 nm in thickness well-suited as an anti-reflection coating for c-Si solar cells. The carrier density and hence the work function of ZnO can accurately be controlled by the incorporation of extrinsic n-type dopants in the ZnO films, such as Al, B, Ga, or H. [12][13][14][15][16] Due to the above-mentioned properties and the relatively low work function of ∼4.4 eV, ZnO is customarily being used as a transparent window layer to collect the current from (nontransparent) carrier-selective contact materials, such as doped c-Si, a-Si:H, or poly-Si. 17 Interestingly, TCOs could also in principle be used as a carrier-selective contact with Si.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Silicon surface passivation by transparent conductive zinc oxide

Loo

Macco

Melskens

et al. 2019

Journal of Applied Physics

View full text Add to dashboard Cite

DOI to the publisher's website. • The final author version and the galley proof are versions of the publication after peer review. • The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rights Copyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights. • Users may download and print one copy of any publication from the public portal for the purpose of private study or research. • You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal. If the publication is distributed under the terms of Article 25fa of the Dutch Copyright Act, indicated by the "Taverne" license above, please follow below link for the End User Agreement:

show abstract

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Silicon surface passivation by transparent conductive zinc oxide

Loo

Macco

Melskens

et al. 2019

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“… 11 , 14 A similar effect was achieved for ZnO:B using the relatively large precursor triisopropyl borate (TIB, [B(O i Pr)] 3 ) for B doping. 15 …”

Section: Introductionmentioning

confidence: 99%

Dopant Distribution in Atomic Layer Deposited ZnO:Al Films Visualized by Transmission Electron Microscopy and Atom Probe Tomography

Giddings

Verheijen

et al. 2018

Chem. Mater.

Self Cite

View full text Add to dashboard Cite

The maximum conductivity achievable in Al-doped ZnO thin films prepared by atomic layer deposition (ALD) is limited by the low doping efficiency of Al. To better understand the limiting factors for the doping efficiency, the three-dimensional distribution of Al atoms in the ZnO host material matrix has been examined on the atomic scale using a combination of high-resolution transmission electron microscopy (TEM) and atom probe tomography (APT). Although the Al distribution in ZnO films prepared by so-called “ALD supercycles” is often presented as atomically flat δ-doped layers, in reality a broadening of the Al-dopant layers is observed with a full-width–half-maximum of ∼2 nm. In addition, an enrichment of the Al at grain boundaries is observed. The low doping efficiency for local Al densities > ∼1 nm–3 can be ascribed to the Al solubility limit in ZnO and to the suppression of the ionization of Al dopants from adjacent Al donors.

show abstract

“…ALD can generate highly conformal ZnO coatings, with competitive electrical and optical properties for relatively thin films (<100 nm). Both Al‐ and B‐doping have been successfully employed for ALD; the Al‐doped process yielded resistivities as low as 7 · 10 −4 Ω · cm for films as thin as 75 nm, and can produce suitable contacts for heterojunction c‐Si/a‐Si solar cells …”

Section: Cvd Processes For (Doped) Zno Layersmentioning

confidence: 99%

Expanding Thermal Plasma Deposition of Al‐Doped ZnO: On the Effect of the Plasma Chemistry on Film Growth Mechanisms

Williams

Ponomarev

Verheijen

et al. 2015

Plasma Processes & Polymers

Self Cite

View full text Add to dashboard Cite

Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers)Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. À3 V Á cm) at low film thicknesses (<300 nm) as a result of a high grain boundary and void density. Microscopy studies of the early growth stage reveal that a high nucleation probability and strong <0002>-texture are the causes of this microstructure. We investigate how the precursor feed composition (diethylzinc-to-O 2 flow rate ratio) can be utilised to modify the growth mechanism and consequently reduce film resistivity ($10 À4 V Á cm), focussing on the role that this flow rate ratio has on the plasma chemistry developing in the downstream region of the expanding plasma (as supported by Langmuir probe and mass spectrometry measurements).

show abstract

Atomic layer deposition of B-doped ZnO using triisopropyl borate as the boron precursor and comparison with Al-doped ZnO

Abstract: The doping efficiency and hence the electrical properties of atomic layer deposited ZnO can be improved by using a novel, safer boron precursor.

Cited by 54 publications

References 122 publications

Silicon surface passivation by transparent conductive zinc oxide

Silicon surface passivation by transparent conductive zinc oxide

Dopant Distribution in Atomic Layer Deposited ZnO:Al Films Visualized by Transmission Electron Microscopy and Atom Probe Tomography

Expanding Thermal Plasma Deposition of Al‐Doped ZnO: On the Effect of the Plasma Chemistry on Film Growth Mechanisms

Contact Info

Product

Resources

About