Room-Temperature Atomic Layer Deposition of Platinum

Abstract

Plasma-assisted atomic layer deposition (ALD) processes were developed for the deposition of platinum films at room temperature. High-quality, virtually pure films with a resistivity of 18–24 μΩ cm were obtained for processes consisting of MeCpPtMe3 dosing, O2 plasma exposure, and H2 gas or H2 plasma exposure. The H2 pulses were used to reduce the PtO x that is otherwise deposited at low substrate temperatures. It is shown that the processes enable the deposition of Pt on polymer, textile, and paper substrates, which is a significant result as it demonstrates the broad application range of Pt ALD, including applications involving temperature-sensitive materials.

Room-temperature plasma-enhanced atomic layer deposition of ZnO: Film growth dependence on the PEALD reactor configuration

“…Plasma-enhanced ALD (PEALD) has been suggested as a solution to overcome these issues, and it has demonstrated to produce high quality films at room temperature [2], besides a variety of metal oxides e. g. TiO 2 [10], HfO 2 [11] and WO 3 [12], also of materials not achievable by thermal ALD e. g. Pt [13] and Ta [14]. PEALD relies on high reactivity of the plasma species, mainly the excited neutral atoms and molecules, referred to as plasma radicals.…”

Electrocatalysts by atomic layer deposition for fuel cell applications

“…[81] To avoid the oxidation of Pt to PtO x due to strong oxidizing agent such as ozone or oxygen plasma, it is necessary to add a step to the ALD cycle in which the surface is exposed to a reducing gas, converting the top PtO x layer into Pt. At room temperature, Mackus and coworkers [82] prepared pure Pt by three-step plasma ALD processes including MeCpPtMe 3 , O 2 and H 2 gas pulses. This development of low-temperature ALD process is very important for designing materials for fuel cells because it enables the deposition of noble metal on temperaturesensitive materials such as polymers and fibers ( Figure 4B).…”

“…This development of low-temperature ALD process is very important for designing materials for fuel cells because it enables the deposition of noble metal on temperaturesensitive materials such as polymers and fibers ( Figure 4B). [82] 3.1.4 The ALD Pt precursors Although MeCpPtMe 3 is the most widely used Pt precursors in ALD, some other Pt precursors such as Pt(acac) 2 (acac=acetylacetonato) [83,84] and platinum(II) hexafluoroacetylacetonate [Pt(hfac) 2 ] [85] also have been developed. Compared with MeCpPtMe 3 , Pt(acac) 2 has lower thermal stability which make it unsuitable precursor for thermal ALD.…”

Time as the Fourth Dimension: Opening up New Possibilities in Chemical Vapor Deposition

“…27 Room temperature plasma ALD has further been extended to metallic platinum films, where it was necessary to first use an oxygen plasma to remove the ligands from the Pt precursor and then a hydrogen plasma to reduce the formed PtOx. 28 This route was successfully used to deposit Pt films on polymers, textiles and paper showing the potential to use a low temperature plasma ALD route on temperature sensitive substrate materials.…”