Each layer of the tandem solar cell, its doping or its thickness, plays a primary task in improving the conversion efficiency. The optimization of the doping of the window layer of the lower solar cell of the tandem cell contributes to the reduction of the cost of the manufacture of its cells. The objective of this work is to show the role of doping the lower window layer on the performances of tandem CS in InGaP / GaAs with a tunnel heterojunction. For this a simulation is carried out using the Atlas-Silvaco simulator. It is specially designed for 2D and 3D modeling of components based on the physics of semiconductors, including electrical, optical and thermal properties The adapted structure is essentially composed of an upper cell in InGaP and a lower cell in GaAs. Between the two upper and lower cells, there is a heterojunction tunnel) P ++ N ++. The structure studied is composed of a thin window layer heavily doped with the materialIn0.629Al0.159Ga0.371P0.841 .Our simulation showed that, for an illumination of AM 1.5 and at room temperature, the parameters, such as the short-circuit current and the conversion efficiency, improve with the doping of the upper window layer.The best conversion efficiency is 24.2343% for a doping of 8x1018 cm-3.
The primary objective of this modeling investigation is to optimize a multijunction cascade device under the AM1.5G spectrum. Based on previous studies, GaInP and GaAs cells between them tunnel junction GaAs, because of their energy band gaps, can be combined together to achieve high-efficiency double-junction devices. In this study, the top cell is made of Ga0.5In0.5P (1.74 eV) while the bottom cell is made of GaAs (1.42 eV). In order to avoid the losses and design constraints observed in two-terminal and four-terminal devices, the tandem cell GaInP /GaAs is designed with tunnel junction. In order to determine the optimal structure of the device, the top and bottom junctions were investigated and optimized with regard to the thicknesses. The optimum configuration of the device shows an efficiency of 36.4% under the AM1.5G spectrum and one sun, which is higher than the efficiency of an optimized single-junction Si cell under the same illumination conditions
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