Simulation of In&lt;inf&gt;0.52&lt;/inf&gt;Ga&lt;inf&gt;0.48&lt;/inf&gt;N solar cell using AMPS-1D

Benmoussa, Dennai; Hassane, Ben Slimane; Helmaoui, Abderrachid

doi:10.1109/irsec.2013.6529713

Cited by 5 publications

(8 citation statements)

References 3 publications

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“…The other modeling parameters of the In Ga 1− N alloy were calculated using the following equations. Electron Affinity ( ) [4,8,17]:…”

Section: Physical and Opticalmentioning

confidence: 99%

“…The results of simulations show that the conversion efficiency increases with the minority carrier (electrons/holes) lifetimes. According to (1)-(6) and (8), this is due to the low defect density that leads to the increase of the photocurrent density and the decrease of the reverse saturation current density inducing the enhancement of the open circuit voltage and so the conversion efficiency.…”

Section: Effect Of Minority Carrier Lifetimes On In 0622 Ga 0378 N mentioning

confidence: 99%

“…The same solar cell was improved by [7] attaining 25.16% efficiency. Benmoussa et al have simulated In 0.52 Ga 0.48 N using AMPS-1D software and published 22.99% efficiency in 2013 [8]. Recently, in 2014, In 0.64 Ga 0.36 N single-junction solar cell was designed and numerically optimized by Akter, exhibiting a high efficiency of 25.02% [2].…”

Section: Introductionmentioning

confidence: 99%

“…The different yields obtained in the works cited above can be principally attributed to the different optical properties, physical parameters, and band gap energy used for each solar cell studied. Thus, the obtained conversion efficiencies for 2 International Journal of Photoenergy InGaN solar cells with a band gap energy of 1.32 eV [5], 1.34 eV [2], 1.622 eV [7], and 1.64 eV [8] are, respectively, 24.95%, 25.02%, 25.16%, and 22.99%.…”

Section: Introductionmentioning

confidence: 99%

“…In contrast with the previous work [4][5][6][7][8], we have simulated the In Ga 1− N-based single-junction solar cell with the optimum band gap energy of 1.39 eV, using the optical and physical properties of In 0.622 Ga 0.378 N and taking into account the Auger and SRH recombination. Furthermore, we have adopted an appropriate carrier mobility model which takes into account the doping concentration, the temperature, and the material composition, which was different from previous work where the carrier mobility in In Ga 1− N was considered similar to GaN and depending only on doping concentration.…”

Section: Introductionmentioning

confidence: 99%

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Design and Simulation of InGaNp-nJunction Solar Cell

Mesrane

Rahmoune

Mahrane

et al. 2015

International Journal of Photoenergy

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The tunability of the InGaN band gap energy over a wide range provides a good spectral match to sunlight, making it a suitable material for photovoltaic solar cells. The main objective of this work is to design and simulate the optimal InGaN single-junction solar cell. For more accurate results and best configuration, the optical properties and the physical models such as the Fermi-Dirac statistics, Auger and Shockley-Read-Hall recombination, and the doping and temperature-dependent mobility model were taken into account in simulations. The single-junction In 0.622 Ga 0.378 N (Eg = 1.39 eV) solar cell is the optimal structure found. It exhibits, under normalized conditions (AM1.5G, 0.1 W/cm 2 , and 300 K), the following electrical parameters: sc = 32.6791 mA/cm 2 , oc = 0.94091 volts, FF = 86.2343%, and = 26.5056%. It was noticed that the minority carrier lifetime and the surface recombination velocity have an important effect on the solar cell performance. Furthermore, the investigation results show that the In 0.622 Ga 0.378 N solar cell efficiency was inversely proportional with the temperature.

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“…The other modeling parameters of the In Ga 1− N alloy were calculated using the following equations. Electron Affinity ( ) [4,8,17]:…”

Section: Physical and Opticalmentioning

confidence: 99%

Section: Effect Of Minority Carrier Lifetimes On In 0622 Ga 0378 N mentioning

confidence: 99%