Modeling of Cascade Solar Cell Ga0.5In0.5P /GaAs Using AMPS-1D

Abstract

The primary objective of this modeling investigation is to optimize a multijunction cascade device under the AM1.5G spectrum. Based on previous studies, GaInP and GaAs cells between them tunnel junction GaAs, because of their energy band gaps, can be combined together to achieve high-efficiency double-junction devices. In this study, the top cell is made of Ga0.5In0.5P (1.74 eV) while the bottom cell is made of GaAs (1.42 eV). In order to avoid the losses and design constraints observed in two-terminal and four-terminal devices, the tandem cell GaInP /GaAs is designed with tunnel junction. In order to determine the optimal structure of the device, the top and bottom junctions were investigated and optimized with regard to the thicknesses. The optimum configuration of the device shows an efficiency of 36.4% under the AM1.5G spectrum and one sun, which is higher than the efficiency of an optimized single-junction Si cell under the same illumination conditions

Fabrication of a GaInN/GaInP/GaInAs/Ge four-junction solar cell using the wafer bonding technology

“…[1][2][3][4][5][6][7] In addition, these materials can theoretically be used in multijunction solar cells that span the infrared to ultraviolet regions of the solar spectrum. [8][9][10][11][12][13][14][15][16] High-conversion-efficiency, multijunction solar cells that are based on other materials have also been reported. [17][18][19][20][21][22] In particular, the efficiency of three-junction solar cells using GaInP, GaInAs, and Ge have exceeded 32% under the condition of AM 1.5 G, i.e., 1 sun.…”

Development of Numerical Method for Optimizing Silicon Solar Cell Efficiency

“…5. Also, it strongly depends on the open circuit voltage, the short-circuit current, and on the Fill Factor (FF) [16][17][18][19][20]. In order to obtain high efficiency, it is necessary to optimize the cell's parameters either experimentally or by simulation.…”