Advances in siliconcarbide microfabrication and growth process optimization for siliconcarbide nanostructures are ushering in new opportunities for microdevices capable of operation in a variety of demanding applications, involving high temperature, radiation, or corrosive environment. This review focuses on the materials science and processing technologies for siliconcarbidethin films and low dimensional structures, and details recent progress in manufacturing technology, including deposition, metallization, and fabrication of semiconductor microdevices, with emphasis on sensor technology. The challenges remaining in developing siliconcarbide as a mainstay materials platform are discussed throughout.

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An AlN/3C-SiC composite layer enables the third-order quasi-symmetric (QS(3)) Lamb wave mode with a high quality factor (Q) characteristic and an ultra-high phase velocity up to 32395 ms(-1). A Lamb wave resonator utilizing the QS(3) mode exhibits a low motional impedance of 91 Ω and a high Q of 5510 at a series resonance frequency (f(s)) of 2.92 GHz, resulting in the highest f(s)·Q product of 1.61 × 10(13) Hz among the suspended piezoelectric thin film resonators reported to date.