An AlN/3C-SiC composite layer enables the third-order quasi-symmetric (QS(3)) Lamb wave mode with a high quality factor (Q) characteristic and an ultra-high phase velocity up to 32395 ms(-1). A Lamb wave resonator utilizing the QS(3) mode exhibits a low motional impedance of 91 Ω and a high Q of 5510 at a series resonance frequency (f(s)) of 2.92 GHz, resulting in the highest f(s)·Q product of 1.61 × 10(13) Hz among the suspended piezoelectric thin film resonators reported to date.

A Lamb wave resonator utilizing an aluminum nitride (AlN) plate with biconvex edges to enhance the quality factor (Q) is demonstrated. The simulation results based on finite element analysis verify that the use of the biconvex edges, instead of the conventional flat edges, can efficiently confine mechanical energy in the AlN Lamb wave resonator. Specifically, the measured frequency response of a 491.8-MHz AlN Lamb wave resonator with biconvex edges yields a Q of 3280 which represents a 2.6× enhancement in Q over a 517.9-MHz Lamb wave resonator on the same AlN plate but with the suspended flat edges.

Surface acoustic wave (SAW) propagation characteristics in a multilayer structure including a piezoelectric aluminum nitride (AlN) thin film and an epitaxial cubic silicon carbide (3C-SiC) layer on a silicon (Si) substrate are investigated by theoretical calculation in this work. Alternating current (ac) reactive magnetron sputtering was used to deposit highly c-axis-oriented AlN thin films, showing the full width at half maximum (FWHM) of the rocking curve of 1.36 • on epitaxial 3C-SiC layers on Si substrates. In addition, conventional two-port SAW devices were fabricated on the AlN/3C-SiC/Si multilayer structure and SAW propagation properties in the multilayer structure were experimentally investigated. The surface wave in the AlN/3C-SiC/Si multilayer structure exhibits a phase velocity of 5528 m s −1 and an electromechanical coupling coefficient of 0.42%. The results demonstrate the potential of AlN thin films grown on epitaxial 3C-SiC layers to create layered SAW devices with higher phase velocities and larger electromechanical coupling coefficients than SAW devices on an AlN/Si multilayer structure. Moreover, the FWHM values of rocking curves of the AlN thin film and 3C-SiC layer remained constant after annealing for 500 h at 540 • C in air atmosphere. Accordingly, the layered SAW devices based on AlN thin films and 3C-SiC layers are applicable to timing and sensing applications in harsh environments.

This paper presents results on the design and fabrication of an AT-cut quartz Lamb wave resonator with phononic crystal (PC) reflective gratings. The deep reactive ion etching process with a laboratory-made etcher was utilized to fabricate PC structures of the AT-cut quartz Lamb wave resonator. The finite element method was adopted to calculate the PC band structure, effective reflective distance from the PC boundary and further the resonant modes and admittance of the phononic Lamb wave resonant cavity. Through the comparison studies between the experimental and simulated results, a design process for the AT-cut quartz phononic Lamb wave resonator was proposed. It is noted that by using the phononic reflectors, the size of the Lamb wave resonator can be reduced significantly.