Advances in silicon carbide science and technology at the micro- and nanoscales

Maboudian, Roya; Carraro, Carlo; Senesky, Debbie G.; Roper, Christopher S.

doi:10.1116/1.4807902

Cited by 135 publications

(80 citation statements)

References 270 publications

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“…The NV − center in diamond is the most studied defect for quantum technologies, so that its properties, strengths and limitations are by now very well understood. Deep defect centers in silicon carbide (SiC) have emerged as strong contenders due to this material's significantly lower cost, availability of mature microfabrication technologies [6,7], and favorable optical emission wavelengths [8].…”

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confidence: 99%

Silicon vacancy center in4H-SiC: Electronic structure and spin-photon interfaces

2016

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Defects in silicon carbide are of intense and increasing interest for quantum-based applications due to this material's properties and technological maturity. We calculate the multi-particle symmetry adapted wave functions of the negatively charged silicon vacancy defect in hexagonal silicon carbide via use of group theory and density functional theory and find the effects of spin-orbit and spinspin interactions on these states. Although we focused on V − Si in 4H-SiC, because of its unique fine structure due to odd number of active electrons, our methods can be easily applied to other defect centers of different polytpes, especially to the 6H-SiC. Based on these results we identify the mechanism that polarizes the spin under optical drive, obtain the ordering of its dark doublet states, point out a path for electric field or strain sensing, and find the theoretical value of its ground-state zero field splitting to be 68 MHz, in good agreement with experiment. Moreover, we present two distinct protocols of a spin-photon interface based on this defect. Our results pave the way toward novel quantum information and quantum metrology applications with silicon carbide.

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confidence: 99%

Silicon vacancy center in4H-SiC: Electronic structure and spin-photon interfaces

2016

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“…SiC has particularly attractive features, including significantly lower cost and mature microfabrication. [14][15][16][17][18][19] A number of defects in silicon carbide (SiC) have significant potential including the antisite-vacancy defect, 3,20 the Si vacancy, 10,12,13,[21][22][23][24][25][26][27][28][29][30][31][32][33] and the divacancy. 7,9,[34][35][36] Experiments have shown that some of these defects can have similar coherence and optical manipulation properties as NV centers.…”

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confidence: 99%

Spin coherence and echo modulation of the silicon vacancy in4H−SiCat room temperature

et al. 2015

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The silicon vacancy in silicon carbide is a strong emergent candidate for applications in quantum information processing and sensing. We perform room temperature optically-detected magnetic resonance and spin echo measurements on an ensemble of vacancies and find the properties depend strongly on magnetic field. The spin echo decay time varies from less than 10 s at low fields to 80 s at 68 mT, and a strong field-dependent spin echo modulation is also observed. The modulation is attributed to the interaction with nuclear spins and is welldescribed by a theoretical model.Deep defect centers in solids are of great current interest as quantum bits or quantum emitters for applications in quantum computing, communication, and sensing, as they combine strengths from the solid state and the atomic world. In particular, the electronic and spin states of some defects have many desirable properties including high efficiency emission of single photons [1-4], highly coherent spin states even at room temperature [5-10], and optical initialization and readout [11][12][13]. Nitrogen-vacancy (NV) centers in diamond, consisting of a nitrogen atom substituted for a carbon next to a vacancy, have been extensively studied and have thus become the standard for such defects.

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“…Silicon carbide (SiC) is widely used in high-temperature structural materials, protective coatings, and semiconductor devices [1]. SiC has more than 200 polytypes, including zinc blend-type cubic (3C) and many hexagonal structures such as 2H, 4H, 6H, and 15R because of a wide variety of stacking sequence of the Si-C bilayer.…”

Section: Introductionmentioning

confidence: 99%

“…Films of 3C-SiC are mostly obtained by CVD at a wide range of deposition temperatures (1373-2673 K), except for epitaxial growth of 4H-and 6H-SiC films on single-crystal substrates [1,10,11]. Although 2H-SiC may be stable at less than 1673 K [12], 2H-SiC films have never been synthesized by CVD.…”

Section: Introductionmentioning

confidence: 99%

2H-SiC films grown by laser chemical vapor deposition

Ito

Kanno

Goto

2015

Journal of the European Ceramic Society

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a b s t r a c tWe demonstrated the synthesis of 2H-SiC films on graphite and (0001) sapphire substrates by laser chemical vapor deposition. A tris(dimethylamino) silane was used as a novel precursor for the synthesis of SiC films in a CH 4 atmosphere. The 2H-SiC films were obtained at a deposition temperature of 920 K on the sapphire substrate. The films comprised a-axis-oriented columnar grains and their in-plane orientation relationship was [1000] 2H-SiC // [0001] sapphire and [0001] 2H-SiC // [1000] sapphire. The films were deposited at the rate of 182 m h −1 .

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Advances in silicon carbide science and technology at the micro- and nanoscales

Cited by 135 publications

References 270 publications

Silicon vacancy center in4H-SiC: Electronic structure and spin-photon interfaces

Silicon vacancy center in4H-SiC: Electronic structure and spin-photon interfaces

Spin coherence and echo modulation of the silicon vacancy in4H−SiCat room temperature

2H-SiC films grown by laser chemical vapor deposition

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