Spin coherence and echo modulation of the silicon vacancy in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mn>4</mml:mn><mml:mi>H</mml:mi><mml:mo>−</mml:mo><mml:mi>SiC</mml:mi></mml:mrow></mml:math>at room temperature

Carter, Sam; Soykal, Ö. O.; Dev, Pratibha; Economou, Sophia E.; Glaser, E. R.

doi:10.1103/physrevb.92.161202

Cited by 88 publications

(108 citation statements)

References 40 publications

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“…With regards to Si vacancies, an ensemble of V Si defects formed through electron irradiation (2 MeV electrons at fluence of 10 15 cm -2 ) were measured to have a coherence time of 81 μs at room temperature [14]. A separate study on a similar sample, with Si vacancies formed through electron irradiation, showed T 2 times at room temperature of 160 μs [16].…”

Section: Introductionmentioning

confidence: 99%

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Electron spin coherence of silicon vacancies in proton-irradiated 4 H -SiC

et al. 2017

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We report T 2 spin coherence times for electronic states localized in Si vacancies in 4H-SiC. Our spin coherence study included two SiC samples that were irradiated with 2 MeV protons at different fluences (10 13 and 10 14 cm -2 ) in order to create samples with unique defect concentrations. Using optically detected magnetic resonance and spin echo, the coherence times for each sample were measured across a range of temperatures from 8 K to 295 K. All echo experiments were done at a magnetic field strength of 0.371 T and a microwave frequency of 10.49 GHz. The longest coherence times were obtained at 8 K, being 270 ± 61 µs for the 10 13 cm -2 proton-irradiated sample and 104 ± 17 µs for the 10 14 cm -2 sample. The coherence times for both samples displayed unusual temperature dependences; in particular, they decreased with temperature until 60 K, then increased until 160 K, then decreased again. This increase between 60 and 160 K is tentatively attributed to a motional Jahn-Teller effect. The consistently longer lifetimes for the 10 13 cm -2 sample suggest that a significant source of the spin dephasing can be attributed to dipole-dipole interactions between Si vacancies or with other defects produced by the proton irradiation. The lack of a simple exponential decay for our 10 14 cm -2 sample indicates an inhomogeneous distribution of defect spins.

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Section: Introductionmentioning

confidence: 99%

“…Using optically detected magnetic resonance (ODMR), defects in SiC can be optically initialized, addressed, and read out [14]. Individual defect spins can be isolated and coherently controlled [15,16].…”

Section: Introductionmentioning

confidence: 99%

Electron spin coherence of silicon vacancies in proton-irradiated 4 H -SiC

et al. 2017

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“…V Si defects in 4H-SiC have also recently been characterized by room-temperature ODMR to find a strong magnetic field dependence of the spin echo properties, useful in magnetometry applications. The spin echo decay time was up to 80 µs at 68 mT, with a strong field-dependent spin echo modulation attributed to the interaction with nuclear spins [23]. It was also recently observed that 4H-and 6H-SiC crystals can contain separately addressable spin-3/2 centers which are not affected by nonaxial strain fluctuations.…”

Section: Sic Based Single Photon Sourcesmentioning

confidence: 83%

Latest Advances in the Generation of Single Photons in Silicon Carbide

Boretti

Rosa

2016

Technologies

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Abstract:The major barrier for optical quantum information technologies is the absence of reliable single photons sources providing non-classical light states on demand which can be easily and reliably integrated with standard processing protocols for quantum device fabrication. New methods of generation at room temperature of single photons are therefore needed. Heralded single photon sources are presently being sought based on different methods built on different materials. Silicon Carbide (SiC) has the potentials to serve as the preferred material for quantum applications. Here, we review the latest advances in single photon generation at room temperatures based on SiC.

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“…17,24 As shown in Fig. 1(c), there are two spectral emission peaks (861.4nm, 916.5nm) which correspond to the two inequivalent lattice sites of the V Si defects in 4H-SiC: V1 (861.4 nm) and V2 (916.3 nm) centers respectively. 7,17,24 The negatively charged V2 center in 4H-SiC is V Si defect with spin 3/2. For spin manipulation of the implanted V Si defects, we measured the continuous-wave ODMR of the ensemble V Si defects on the stripe at room temperature.…”

Section: -22mentioning

confidence: 99%

“…The observed spectrum is in the near-infrared range and also similar to the previous measurement results of the PL spectrum of single and ensemble V Si defects. 3,5,7,17 Further, we measured the cryogenic temperature (5K) PL of the ensemble defects on the stripe with a cryogenic temperature confocal system (Montana Instruments Cryostation). 17,24 As shown in Fig. 1(c), there are two spectral emission peaks (861.4nm, 916.5nm) which correspond to the two inequivalent lattice sites of the V Si defects in 4H-SiC: V1 (861.4 nm) and V2 (916.3 nm) centers respectively.…”

Section: -22mentioning

confidence: 99%

<strong>Scalable fabrication of single silicon vacancy defect arrays in silicon carbide using focused ion beam</strong>

Wang

Gao

2017

Proceedings of the 7th International Multidisciplinary Conference on Optofluidics 2017

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In this work, we present a method for targeted and maskless fabrication of single silicon vacancy (V Si ) defect arrays in silicon carbide (SiC) using focused ion beam. Firstly, we studied the photoluminescence (PL) spectrum and optically detected magnetic resonance (ODMR) of the generated defect spin ensemble, confirming that the synthesized centers were in the desired defect state. Then we investigated the fluorescence properties of single V Si defects and our measurements indicate the presence of a photostable single photon source. Finally, we find that the Si ++ ion to V Si defect conversion yield increases as the implanted dose decreases. The reliable production of V Si defects in silicon carbide could pave the way for its applications in quantum photonics and quantum information processing. The resolution of implanted V Si defects is limited to a few tens of nanometers, defined by the diameter of the ion beam.Silicon carbide (SiC) is a technologically mature semiconductor material, which can be grown as inch-scale high-quality single crystal wafers and has been widely used in microelectronics systems and high-power electronics, etc. In recent years, some defects in SiC have been successfully implemented as solid state quantum bit 1-8 and quantum photonics 9-11 . They meet essential requirements for spin-based quantum information processing such as optical initialization, readout and microwave control of the spin state, which are similar as the nitrogen vacancy (NV) centers in diamond. 12 In particular, silicon vacancy (V Si ) defect in 4H-SiC has increasingly attracted attention owing to its excellent features, such as non-blinking single photon emission and long spin coherence times which persist up to room temperature (about 160 µs). 3,5,13 These remarkable properties have been exploited in many applications in quantum

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Spin coherence and echo modulation of the silicon vacancy in4H−SiCat room temperature

Cited by 88 publications

References 40 publications

Electron spin coherence of silicon vacancies in proton-irradiated 4 H -SiC

Electron spin coherence of silicon vacancies in proton-irradiated 4 H -SiC

Latest Advances in the Generation of Single Photons in Silicon Carbide

<strong>Scalable fabrication of single silicon vacancy defect arrays in silicon carbide using focused ion beam</strong>

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