No abstract

No abstract

The Sol-gel route is a versatile method to fabricate multi-layer, dense and homogeneous ZnO thin films with a controlled thickness and defects for a memristive application. In this work, sol-gel derived multi-layer undoped and Al-doped ZnO thin films were prepared by a spin-coating technique on SiO2/Ti/Pt and silica glass substrates. The effect of both Al doping and curing conditions on the structural and morphological features of ZnO films was investigated by complementary techniques, including electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy, micro-Raman spectroscopy, and X-ray diffraction analysis. Electrical measurements were performed on SiO2/Ti/Pt/ZnO/Pt(dishes) and SiO2/Ti/Pt/ZnO(Al)/Pt(dishes) fabricated memristive cells and preliminary current-voltage curves were acquired.

No abstract

Sol-gel derived multilayer ZnO thin films were successfully prepared by spin coating technique on glass, Si wafer and platinum substrates. Structural and morphological features of the samples were investigated by field emission scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD) analysis. The combined techniques assess that uniform flawless films with preferable c-axis orientation of the ZnO crystallites could be obtained. The preliminary electrical measurements on sol-gel derived SiO 2 /Ti/Pt/ZnO/Ag systems showed memristive behavior, and the detailed studies of switching response are in progress.