Sol-gel derived oriented multilayer ZnO thin films with memristive response

Ayana, Dawit G.; Ceccato, Riccardo; Collini, Cristian; Lorenzelli, Leandro; Prusakova, Valentina; Dirè, Sandra

doi:10.1016/j.tsf.2016.07.025

Cited by 12 publications

(10 citation statements)

References 37 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Another critical parameter on the synthesis process of resistive switching devices is the metal salt precursors, which are subdivided into three counter anions groups; [ 100 ] oxidants (hydrated nitrates), [ 72,79,80,98,101–121 ] reducers (alkoxides, [ 117,122–125 ] acetates, [ 72,76,78,79,104,105,109,111,113–118,126–153 ] and acetylacetonates [ 81,134,144,154–157 ] ), and neutrals (chlorine‐based). [ 63,71,103,107,110,112,116,119,125,132,158–164 ] Among these, oxidant counter ions are preferable due to the high oxidizing power (negative charge), greater solubility in water or polar organic solvents and low decomposition temperature, which are related to the electronic interactions between the metal and the nitrate group, as shown in Figure 9c.…”

Section: Fundamentals Of Solution‐based Metal Oxide Rramsmentioning

confidence: 99%

“…It constitutes a substantial portion of the oxide precursor solutions: around 98% and 90% for lower and higher concentrations, respectively. The most common solvents in solution‐based metal oxide RRAMs are 2‐methoxyethanol (2‐ME), [ 63,72,79,80,98,102,104,105,107,109,112,113,115–119,121,127,129,130,133,134,137,139,142,144,150–153,158,159,168–185 ] ethanol, [ 72,77,78,82,103,108,113,114,120,126,132,135,136,138,145,147,157,162–164,168,186–200 ] deionized (DI) water, [ 73,101,116,120,123,148,162,163,190,201 ] acetic acid, [ 103,121,129–131,134,140,142,144,149,150,152,154,173,179,180,183,202 ] and isopropanol [ 23,123,125,128,136,169,181,203 ] among others (ethylene glycol, [ 141,204 ] 2‐butoxyethanol, [ 205 ] acetylacetone, [ 149 ] and acetonitrile […”

Section: Fundamentals Of Solution‐based Metal Oxide Rramsmentioning

confidence: 99%

See 1 more Smart Citation

Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

et al. 2020

View full text Add to dashboard Cite

Metal oxide resistive switching memories have been a crucial component for the requirements of the Internet of Things, which demands ultra‐low power and high‐density devices with new computing principles, exploiting low cost green products and technologies. Most of the reported resistive switching devices use conventional methods (physical and chemical vapor deposition), which are quite expensive due to their up‐scale production. Solution‐processing methods have been improved, being now a reliable technology that offers many advantages for resistive random‐access memory (RRAM) such as high versatility, large area uniformity, transparency, low‐cost and a simple fabrication of two‐terminal structures. Solution‐based metal oxide RRAM devices are emergent and promising non‐volatile memories for future electronics. In this review, a brief history of non‐volatile memories is highlighted as well as the present status of solution‐based metal oxide resistive random‐access memory (S‐RRAM). Then, a focus on describing the solution synthesis parameters of S‐RRAMs which induce a massive influence in the overall performance of these devices is discussed. Next, a precise analysis is performed on the metal oxide thin film and electrode interface and the recent advances on S‐RRAM that will allow their large‐area manufacturing. Finally, the figures of merit and the main challenges in S‐RRAMs are discussed and future trends are proposed.

show abstract

Section: Fundamentals Of Solution‐based Metal Oxide Rramsmentioning

confidence: 99%

Section: Fundamentals Of Solution‐based Metal Oxide Rramsmentioning

confidence: 99%

Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

et al. 2020

View full text Add to dashboard Cite

show abstract

“…The solvent used for the sol-gel process must exhibit a dielectric constant high enough to dissolve the metal salts. Generally, alcohols with low carbon number (i.e., methyl alcohol, ethyl alcohol, isopropanol, 1-butanol, and 2-methoxyethanol) are preferred as the potential solvents [29][30][31][32] and references therein. Ethylene glycol (boiling point; b.pt = 194.4 o C) has also been reported exhibiting a dielectric constant of 40.61 (at 25 o C) [33,34].…”

Section: Processingmentioning

confidence: 99%

Sol-Gel-Derived Doped ZnO Thin Films: Processing, Properties, and Applications

Mahmood¹,

Akhtar²

2017

Recent Applications in Sol-Gel Synthesis

View full text Add to dashboard Cite

Sol-gel-derived zinc oxide (ZnO)-based materials with an improved microstructure are consumed in electronics and electrical frameworks owing to their crystal structure dependent properties, which can be exploited for optical, electrical, and photocatalytic applications. Despite research articles published each year on the strategies to improve the optoelectronic properties of ZnO, the topic is still actively pursued in literature. This chapter provides an insight into the recent developments for the sol-gel-derived processing of the pure and doped ZnO thin films. It also highlights the challenges and opportunities surrounding the processing of these devices. The recent developments in the synthesis of pure, doped ZnO, and corresponding applications of these films will be discussed in detail. Consequently, the aim of this chapter is to provide an overview of the novel developmental strategies to improve ZnO-based thin films by a sol-gel route with enhanced optical properties for practical applications ranging from optical and electrical circuits to sensing.

show abstract

“…It is known that thin films properties and morphology can be affected by postprocessing annealing temperature, which has been the subject of several works. In the case of the sol-gel spin coating technique, the morphology and properties of the film are also impacted by processing parameters such as the chelating agent [36,37], the zinc salt concentration [38][39][40], the solvent [41][42][43][44][45], the rotation speed [46][47][48][49][50][51][52][53][54][55][56][57] and the nature of the substrate [58][59][60][61][62][63]. In the present study, spin coating, which is usually devoted to the spreading of viscous solutions, is used in an uncommon configuration of fluid liquid deposition, giving rise to very thin films (<100 nm) with peculiar nano-granular morphologies.…”

Section: Introductionmentioning

confidence: 99%

Preparation of Very Thin Zinc Oxide Films by Liquid Deposition Process: Review of Key Processing Parameters

et al. 2022

View full text Add to dashboard Cite

We used sol-gel and spin-coating in the original configuration of a liquid deposition process to synthesize particularly thin ZnO films (<100 nm) with nano-granular morphology, high grain orientation and variable optical properties. The concentration of the zinc salt, the concentration of the chelating agent, the nature of the solvent and the substrate material have been identified as key parameters that determine the microstructure of the deposited layer and thus its final properties. The thorough and practical examination of the effects of the synthesis parameters evidenced a three-step growth mechanism for these ZnO thin films: (i) a reaction of precursors, (ii) a formation of nuclei, and (iii) a coalescence of nanoparticles under thermal annealing. The growth of these very thin films is thus conditioned by the interaction between the liquid phase and the substrate especially during the initial steps of the spin coating process. Such thin ZnO films with such nano-granular morphology may be of great interest in various applications, especially those requiring a large active surface area.

show abstract

Sol-gel derived oriented multilayer ZnO thin films with memristive response

Cited by 12 publications

References 37 publications

Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

Sol-Gel-Derived Doped ZnO Thin Films: Processing, Properties, and Applications

Preparation of Very Thin Zinc Oxide Films by Liquid Deposition Process: Review of Key Processing Parameters

Contact Info

Product

Resources

About