State-of-the-art microfabricated ion traps for quantum information research are approaching nearly one hundred control electrodes. We report here on the development and testing of a new architecture for microfabricated ion traps, built around ball-grid array (BGA) connections, that is suitable for increasingly complex trap designs. In the BGA trap, through-substrate vias bring electrical signals from the back side of the trap die to the surface trap structure on the top side. Gold-ball bump bonds connect the back side of the trap die to an interposer for signal routing from the carrier. Trench capacitors fabricated into the trap die replace area-intensive surface or edge capacitors. Wirebonds in the BGA architecture are moved to the interposer. These last two features allow the trap die to be reduced to only the area required to produce trapping fields. The smaller trap dimensions allow tight focusing of an addressing laser beam for fast single-qubit rotations. Performance of the BGA trap as characterized with 40 Ca + ions is comparable to previous surface-electrode traps in terms of ion heating rate, mode frequency stability, and storage lifetime. We demonstrate two-qubit entanglement operations with 171 Yb + ions in a second BGA trap.
Public reporting burden for this collection of information is estimated to average 1 hour per response, including the ti gathering and maintaining the data needed, and completing and reviewing the collection of information. Send comm collection of information, including suggestions for reducing this burden, to Washington Headquarters Services, Direc Davis Highway, Suite 1204, Arlington, VA 22202-4302, and small satellites flying in clusters require periodic "stationkeeping" to keep them in f lace. The required impulse is very small -the goal is not to keep the individual satellites in rigid formation, but only to keep them in well-defined orbitals with respect to one another. The necessary impulse, therefore, is only the amount needed to overcome the difference in drag between the most-affected and the least-affected satellites in the cluster. Estimates are that the differential drag can be overcome by providing -1 uNsec (micro-Newton second) to -1 mN sec (milli-Newton gecond) every 10 to 100 seconds throughout each satellite's mission. The system we are developing will do that. The thrusters have very low power and energy thresholds for ignition ( -10 mWatts, -100 Joules), and no moving parts so they are expected to be highly reliable. A single thruster array contains a quarter of a million separate thrusters. 068 SUBJECT TERMSMicro-propulsion. Micro-satellites, Nano-satellites, Pico-satellites, MEMS. Abstract. Small satellites flying in clusters require periodic "stationkeeping" to keep them in place. The required impulse is very small -the goal is not to keep the individual satellites in rigid formation, but only to keep them in well-defined Orbitals with respect to one another. The necessary impulse, therefore, is only the amount needed to overcome " e difference in drag between the most-affected and the least-affected satellites in the cluster. NUMBER OF PAGESEstimates are that the differential drag can be overcome by providing -1 |iNsec (micro-Newton second) to -1 mN sec (mi'li-Newton second) every 10 to 100 seconds throughout each satellite's mission. The system we are developing will do that. The thrusters have very low power and energy thresholds for ignition (-10 mWatts, -100 uJoules), and no moving parts so they are expected to be highly reliable. A single thruster array contains a quarter of a million separate thrusters.
Ion beam milling is a dry etching process capable of anisotropically transferring lithographic patterns from photoresist (or other mask material) into an underlying substrate. The process is conceptually simple, experimentally controllable, and therefore relatively easy to simulate on a computer. In this paper, the results of an attempt to construct a physically realistic model of ion beam milling are reported. The model explicitly demonstrates the effects of redeposition and reflected ion beam milling on the sample surface. Several comparisons of simulated profiles with real sample profiles are presented.
This paper describes a manufacturable submicron CMOS polysilicon gate process. A new hydrogen bromide (HBr) plasma chemistry for etching, and contrast enhancement material (CEM) for optical lithography have been applied. The HBr chemistry has achieved a selectivity of better than 30: 1 to gate oxide with a vertical side wall profile and no measurable undercutting, even with POC13 doped poiy. Because of the low etch rate of photoresist and the CEM process, the size change during etch (pre vs. post ) is estimated to be less than O.05p. per side. In addition, the multilayer contrast enhanced photoresist process has been optimized using statistically designed experiments to achieve maximum critical dimension (CD) control, resolution, and depth of focus. Electrical line width studies show that the total proximity effect due to lithography and etch is about O.O4t. Statistical process control of O.8O.i. O.15p. (3) has been achieved and demonstrated on Honeywell's O.8p. Radiation Hardened CMOS technology 1
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