Resistivity, Hall effect, and optical absorption coefficient measurements are performed on SnSe evaporated thin films. The resistivity decreases with increasing temperature whereas the Hall mobility and carrier density increase with increasing temperature. An exponential 1/T law is observed for each of these variations. The results are explained in terms of a grain boundary potential barrier mechanism. The optical absorption coefficient is measured at 300 K over the photon energy range 0.8 to 1.3 eV. An analysis of absorption measurements indicates that the SnSe thin film absorption edge is due to allowed direct transitions across an energy gap of about 1.21 eV.
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