High barrier height Au/n-type InP Schottky contacts with a POxNyHz interfacial layer

Quan, Dang Tran; Hbib, H.

doi:10.1016/0038-1101(93)90085-5

Cited by 83 publications

(11 citation statements)

References 39 publications

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“…A higher ideality factor indicates that the transport mechanism is no longer dominated by thermionic emission. Non-ideal behavior is often attributed to variations in the interface composition and to other current transport mechanisms provided by other defect states in the band gap of the semiconductor such as structural defects, surface contamination, barrier tunneling, or generation and recombination in the space charge region [45,46]. To understand which mechanisms influence the junction behavior, the I-V characteristics of the device are studied on a log-log scale.…”

Section: Resultsmentioning

confidence: 99%

Luminescence from Zinc Oxide Nanostructures and Polymers and their Hybrid Devices

et al. 2010

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Zinc oxide (ZnO) is a strong luminescent material, as are several polymers. These two materials have distinct drawbacks and advantages, and they can be combined to form nanostructures with many important applications, e.g., large-area white lighting. This paper discusses the origin of visible emission centers in ZnO nanorods grown with different approaches. White light emitting diodes (LEDs) were fabricated by combining n-ZnO nanorods and hollow nanotubes with different p-type materials to form heterojunctions. The p-type component of the hybrids includes p-SiC, p-GaN, and polymers. We conclude by analyzing the electroluminescence of the different light emitting diodes we fabricated. The observed optical, electrical, and electro-optical characteristics of these LEDs are discussed with an emphasis on the deep level centers that cause the emission.

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Section: Resultsmentioning

confidence: 99%

Luminescence from Zinc Oxide Nanostructures and Polymers and their Hybrid Devices

et al. 2010

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“…Similar effects have been seen for other MIS systems. [332][333][334][335] The insertion of a thin layer of a (different kind of) semiconducting material between a metal and a semiconductor substrate have also been employed to change the SBH for semiconductors. [320][321][322][323]336 The thickness of the interface semiconductor layer, sometimes referred as the interface control layer (ICL), could be as thin as one or two monolayers, in which case the entire ICL is inside the ISR and its effect is better considered quantum mechanically, 106 as discussed in Sec.…”

Section: B Sbh Modification With Thin Layer Of Insulating Materialsmentioning

confidence: 99%

The physics and chemistry of the Schottky barrier height

Tung

2014

Applied Physics Reviews

1,042

479

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The formation of the Schottky barrier height (SBH) is a complex problem because of the dependence of the SBH on the atomic structure of the metal-semiconductor (MS) interface. Existing models of the SBH are too simple to realistically treat the chemistry exhibited at MS interfaces. This article points out, through examination of available experimental and theoretical results, that a comprehensive, quantum-mechanics-based picture of SBH formation can already be constructed, although no simple equations can emerge, which are applicable for all MS interfaces. Important concepts and principles in physics and chemistry that govern the formation of the SBH are described in detail, from which the experimental and theoretical results for individual MS interfaces can be understood. Strategies used and results obtained from recent investigations to systematically modify the SBH are also examined from the perspective of the physical and chemical principles of the MS interface.

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“…The high values of the ideality factor at low temperatures are probably due to the potential drop in the interfacial layer. 26 For the investigation of the temperature dependence of barrier height and ideality factor, we use Richardson plot of saturation current. Equation (2) can be written as Fig.…”

Section: -2mentioning

confidence: 99%

Systematic study of interface trap and barrier inhomogeneities using I-V-T characteristics of Au/ZnO nanorods Schottky diode

Hussain

Soomro

Bano

et al. 2013

Journal of Applied Physics

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This paper presents in-depth analysis of I-V-T characteristics of Au/ZnO nanorods Schottky diodes. The temperature dependence I-V parameters such as the ideality factor and the barrier heights have been explained on the basis of inhomogeneity. Detailed and systematic analysis was performed to extract information about the interface trap states. The ideality factor decreases, while the barrier height increases with increase of temperature. These observations have been ascribed to barrier inhomogeneities at the Au/ZnO nanorods interface. The inhomogeneities can be described by the Gaussian distribution of barrier heights. The effect of tunneling, Fermi level pinning, and image force lowering has contribution in the barrier height lowering. The recombination-tunneling mechanism is used to explain the conduction process in Au/ZnO nanorods Schottky diodes. The ionization of interface states has been considered for explaining the inhomogeneities.

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High barrier height Au/n-type InP Schottky contacts with a POxNyHz interfacial layer

Cited by 83 publications

References 39 publications

Luminescence from Zinc Oxide Nanostructures and Polymers and their Hybrid Devices

Luminescence from Zinc Oxide Nanostructures and Polymers and their Hybrid Devices

The physics and chemistry of the Schottky barrier height

Systematic study of interface trap and barrier inhomogeneities using I-V-T characteristics of Au/ZnO nanorods Schottky diode

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