Electrical properties and optical absorption of SnSe evaporated thin films

Quan, Dang Tran

doi:10.1002/pssa.2210860147

Cited by 51 publications

(16 citation statements)

References 17 publications

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“…(113), (020), (203), which confirms the polycrystalline nature of the film. A similar preferred orientation of grains along the (111) plane in SnSe film was observed in the evaporated SnSe thin films by Bhatt et al [15] and by Dang Tran Quan [16]. On the other hand, H. Chandra et al [17] had observed (400) diffraction plane for films grown by flash evaporation technique and Teghil et al [18] had reported orientation of grains along (011) and (200) Diffraction Standards (JCPDS) data card [19].…”

Section: Resultssupporting

confidence: 51%

Influence of the substrate temperature on the structural, optical, and electrical properties of tin selenide thin films deposited by thermal evaporation method

Kumar

Sharma

Padha

et al. 2009

Cryst. Res. Technol.

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Thin films of tin selenide (SnSe) were deposited on sodalime glass substrates, which were held at different temperatures in the range of 350-550 K, from the pulverized compound material using thermal evaporation method. The effect of substrate temperature (T s ) on the structural, morphological, optical, and electrical properties of the films were investigated using x-ray diffraction analysis (XRD), scanning electron microscopy (SEM), transmission measurements, and Hall-effect characterization techniques. The temperature dependence of the resistance of the films was also studied in the temperature range of 80-330 K. The XRD spectra and the SEM image analyses suggest that the polycrystalline thin films having uniform distribution of grains along the (111) diffraction plane was obtained at all T s . With the increase of T s the intensity of the diffraction peaks increased and well-resolved peaks at 550 K, substrate temperature, were obtained. The analysis of the data of the optical transmission spectra suggests that the films had energy band gap in the range of 1.38-1.18 eV. Hall-effect measurements revealed the resistivity of films in the range 112-20 Ωcm for films deposited at different T s . The activation energy for films deposited at different T s was in the range of 0.14 eV-0.28 eV as derived from the analysis of the data of low-temperature resistivity measurements.

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Section: Resultssupporting

confidence: 51%

Influence of the substrate temperature on the structural, optical, and electrical properties of tin selenide thin films deposited by thermal evaporation method

Kumar

Sharma

Padha

et al. 2009

Cryst. Res. Technol.

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“…The optical transmittance decreases on annealing. Since the absorption coefficient is very large and it is measured at room temperature, the presence of the indirect band gap as in the case of the bulk sample is improbable [16,17]. It is reasonable to consider that the absorption of SnSe evaporated thin films is due to an allowed direct transition from the top of the valence band to the bottom of the conduction band at the centre of the Brillouin zone.…”

Section: Snse Thin Filmsmentioning

confidence: 99%

Optical properties of vacuum evaporated CdxSn1−xSe polycrystalline thin films: influence of composition and thickness

Padiyan

Marikani²,

Murali

2005

Physica B: Condensed Matter

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“…NbSe 2 is metallic [27][28][29][30] with room temperature ab-plane resistivity values between 1.5 μΩ-m -36 μΩ-m reported [27][28][29]. As a binary, SnSe is a p-type semiconductor [31] with significantly higher room temperature resistivity values of 4×10 4 μΩ-m -1.8×10 6 μΩ-m for bulk samples [32] and 1.0×10 5 μΩ-m -2.0×10 6 μΩ-m for polycrystalline thin films [33] [34]. The simplest approximation is to assume that only the NbSe 2 layer conducts, as was done previously for the MLC.…”

Section: Atom Parametersmentioning

confidence: 99%

Structural and electrical properties of a new ([SnSe]1.16)1(NbSe2)1 polytype

Alemayehu

Falmbigl

Grosse

et al. 2015

Journal of Alloys and Compounds

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A new polytype of the misfit layer compound ([SnSe] 1.16) 1 (NbSe 2) 1 with extensive rotational disorder was prepared from designed modulated elemental reactants. This polytype, previously referred to as a ferecrystal due to the extensive rotational disorder, formed over a range of compositions and precursor thicknesses and the resulting c-axis lattice parameters ranged from 1.2210(4) to 1.2360(4) nm. These values bracket the value published for the crystalline misfit compound prepared at high temperature. The a-and b-axis in-plane lattice parameters of both the SnSe and NbSe 2 constituents were incommensurate, which differs from the misfit layered compound formed via high temperature reaction that has a common b-axis lattice parameter for the two constituents. The in-plane area per unit cell of the ferecrystal is 1-2% larger than the compound formed at high temperature. The ferecrystalline ([SnSe] 1.16) 1 (NbSe 2) 1 compound is 1.6 times more conductive than the misfit layer compound. Hall effect measurements indicate that the ferecrystal is a p-type metal and that the higher conductivity is a consequence of higher mobility of carriers in the ferecrystalline compound.

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Electrical properties and optical absorption of SnSe evaporated thin films

Cited by 51 publications

References 17 publications

Influence of the substrate temperature on the structural, optical, and electrical properties of tin selenide thin films deposited by thermal evaporation method

Influence of the substrate temperature on the structural, optical, and electrical properties of tin selenide thin films deposited by thermal evaporation method

Optical properties of vacuum evaporated CdxSn1−xSe polycrystalline thin films: influence of composition and thickness

Structural and electrical properties of a new ([SnSe]1.16)1(NbSe2)1 polytype

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