Influence of the substrate temperature on the structural, optical, and electrical properties of tin selenide thin films deposited by thermal evaporation method

Abstract

Thin films of tin selenide (SnSe) were deposited on sodalime glass substrates, which were held at different temperatures in the range of 350-550 K, from the pulverized compound material using thermal evaporation method. The effect of substrate temperature (T s ) on the structural, morphological, optical, and electrical properties of the films were investigated using x-ray diffraction analysis (XRD), scanning electron microscopy (SEM), transmission measurements, and Hall-effect characterization techniques. The temperature dependence of the resistance of the films was also studied in the temperature range of 80-330 K. The XRD spectra and the SEM image analyses suggest that the polycrystalline thin films having uniform distribution of grains along the (111) diffraction plane was obtained at all T s . With the increase of T s the intensity of the diffraction peaks increased and well-resolved peaks at 550 K, substrate temperature, were obtained. The analysis of the data of the optical transmission spectra suggests that the films had energy band gap in the range of 1.38-1.18 eV. Hall-effect measurements revealed the resistivity of films in the range 112-20 Ωcm for films deposited at different T s . The activation energy for films deposited at different T s was in the range of 0.14 eV-0.28 eV as derived from the analysis of the data of low-temperature resistivity measurements.

SnSe Thin Film Electrodes Prepared by Vacuum Evaporation: Enhancement of Photoelectrochemical Efficiency by Argon Gas Condensation Method

“…The prominent Bragg reflection occurred at 2ª = ³30°corresponding to (111) diffraction. A similar preferred orientation along the (111) plane in SnSe film was reported by Kumar et al 20 and by Zulkarnain et al 21 The XRD results are summarized in Table 1. The (111) interplanar distance (d) values for With-and Without-AGC films are compared with the standard data (JCPDS Card number 98-009-1204).…”

Effect of Film Thickness on Optical Properties of Tin Selenide Thin Films Prepared by Thermal Evaporation for Photovoltaic Applications

“…Among them, the thermal evaporation is most commonly employed method because it is very simple, economical, and convenient technique, mostly used in the production of large-area devices. We already reported the effect of substrate temperature on the properties of SnSe thin film [11]. In the present work,…”

High-performance SnSe thermoelectric materials: Progress and future challenge

“…For fabricating SnSe films, the synthetic methods are relatively mature, including atomic layer deposition (ALD) [335], brush plating technique [336], simple bath deposition [337][338][339], thermal evaporation method [340][341][342][343][344][345][346], solution method [347,348], hot wall epitaxy technique [349][350][351], flash evaporation method [352,353], vacuum deposition technique [309,[354][355][356][357], chemical deposition technique [358], pulsed laser deposition (PLD) [359][360][361][362][363][364][365][366], spray pyrolysis technique [367], and electrodeposition technique [368][369][370][371][372]. Most of the fabricated films are orthorhombic α-SnSe while rock-salt structure (111) SnSe film was also grown with molecular beam epitaxy (MBE) technique on Bi 2 Se 3 surface [273].…”