2012
DOI: 10.5923/j.materials.20120201.08
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Effect of Film Thickness on Optical Properties of Tin Selenide Thin Films Prepared by Thermal Evaporation for Photovoltaic Applications

Abstract: Tin Selenide (SnSe) thin films were prepared from the pulverized compound material by thermal evaporation method, to study the effect of film thickness on its structural, and optical properties. The different thicknesses of SnSe thin films, from 150 nm to 500 nm, were grown on glass substrate held at room temperature. X-ray diffraction, atomic force microscopy, transmission measurement, and four-point probe method were used to characterize the thin films. The optical transmission spectra suggests, the energy b… Show more

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Cited by 67 publications
(31 citation statements)
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“…The decrease in resistance is attributed to increased drift mobility and concentration of charge carriers at elevated temperatures [15]. At room temperature minimum ln of resistivity found was 9.60 X m of sample B3, and at 600°C temperature minimum ln of resistivity found was 1.25 X m of sample B2 which was also in good agreement with already reported results [13,[18][19][20] and continuation of our author's previous work [21]. Enhanced electrical conductivity of bismuth cobaltite can be the result of improved grain alignment due to Nd doping [22], The activation energy was also calculated from Arrhenius relation as given in Eq.…”
Section: Electrical Analysissupporting
confidence: 91%
“…The decrease in resistance is attributed to increased drift mobility and concentration of charge carriers at elevated temperatures [15]. At room temperature minimum ln of resistivity found was 9.60 X m of sample B3, and at 600°C temperature minimum ln of resistivity found was 1.25 X m of sample B2 which was also in good agreement with already reported results [13,[18][19][20] and continuation of our author's previous work [21]. Enhanced electrical conductivity of bismuth cobaltite can be the result of improved grain alignment due to Nd doping [22], The activation energy was also calculated from Arrhenius relation as given in Eq.…”
Section: Electrical Analysissupporting
confidence: 91%
“…Figure 8a shows that, the values of transmission were increased with decreasing the particle size from 10.6 to 5.6 nm as seen at the higher wavelength region. The higher transmission values is due to the presence of less adsorbed states and the surface smoothing in the thinner film as reported by Kumar et al [26]. In addition, Fig.…”
Section: Resultsmentioning
confidence: 54%
“…In addition, there are various factors that may influence the transmittance or absorption of the films, which could affect the band gap of the WO 3 films [30]. Generally, thicker films absorb more light, causing the band gap to decrease [31]. Thus, improved light absorption would help generate a larger number of charge carriers, which would increase the photocurrent.…”
Section: Crystalline Optical and Morphological Propertiesmentioning
confidence: 97%