We report on the observation of broad photoluminescence wavelength tunability from n-type gallium nitride nanoparticles (GaN NPs) fabricated using the ultraviolet metal-assisted electroless etching method. Transmission and scanning electron microscopy measurements performed on the nanoparticles revealed large size dispersion ranging from 10 to 100 nm. Nanoparticles with broad tunable emission wavelength from 362 to 440 nm have been achieved by exciting the samples using the excitation power-dependent method. We attribute this large wavelength tunability to the localized potential fluctuations present within the GaN matrix and to vacancy-related surface states. Our results show that GaN NPs fabricated using this technique are promising for tunable-color-temperature white light-emitting diode applications.

In this paper we investigate the effect of electron beam irradiation on the dielectric properties of As 2 S 3 Chalcogenide glass. By means of low-loss Electron Energy Loss Spectroscopy, we derive the permittivity function, its dispersive relation, and calculate the refractive index and absorption coefficients under the constant permeability approximation. The measured and calculated results show a heretofore unseen phenomenon: a reduction in the permittivity of ≥ 40%. Consequently a reduction of the refractive index of 20%, hence suggesting a conspicuous change in the optical properties of the material under irradiation with a 300 keV electron beam. The plausible physical phenomena leading to these observations are discussed in terms of the homopolar and heteropolar bond dynamics under high energy absorption. The reported phenomena, exhibited by As 2 S 3 -thin film, can be crucial for the development of photonics integrated circuits using electron beam irradiation method.

Abstract:We report on the large photoluminescence redshift observed in nanostructures fabricated using n-type GaN by ultraviolet (UV) metal-assisted electroless chemical-etching method. The scanning electron microscopy (SEM) characterization showed nanostructures with size dispersion ranging from 10 to 100 nm. We observed the crystalline structure using high resolution transmission electron microscopy (HRTEM) and electron energy loss (EELS) techniques. In contrast to 362 nm UV emission from the GaN epitaxy, the nanostructures emitted violet visible-light in photoluminescence (PL) characterization with increasing optical excitation. An energy band model was presented to shed light on the large PL redshift under the influence of surface states, which resulted in two competing photoluminescence mechanisms depending on excitation conditions.

In this paper we report on the feasibility of light confinement in orbital geodesics on stationary, planar, and centro-symmetric refractive index mappings. Constrained to fabrication and [meta]material limitations, the refractive index, n, has been bounded to the range: $0.8\leq n(\vec r)\leq 3.5$. Mappings are obtained through the inverse problem to the light geodesics equations, considering trappings by generalized orbit conditions defined \emph{a priori}. Our simulation results show that the above mentioned refractive index distributions trap light in an open orbit manifold, both perennial and temporal, in regards to initial conditions. Moreover, due to their characteristics, these mappings could be advantageous to optical computing and telecommunications, for example, providing an on-demand time delay or optical memories. Furthermore, beyond their practical applications to photonics, these mappings set forth an attractive realm to construct a panoply of celestial mechanics analogies and experiments in the laboratoryComment: 18 pages, 10 figures with subfigures, journal articl

In this article we explain in a new light two fundamental concepts ofquantum optics, the quantum beam splitter and the quantum interferometer, in termsof two state quantum wave functions. This method is consistent with the concept ofentanglement, and hence the algebra needed to describe them is reduced to additionsand products of the components of the quantum states. Furthermore, under thepremises of this method it is possible to study quantum states of greater complexity,like those arising from the addition and products of single photon states.