The trench-type IGBT is one of the major devices developed for very high-voltage applications, and has been widely used for the motor control of EVs as well as for power-supply systems. In the reported investigation, the accurate prediction of the power dissipation of IGBT circuits has been analyzed. The main focus is given on the carrier dynamics within the IGBTs during the switching-off phase. It is demonstrated that discharging and charging at the IGBT's gate-bottom-overlap region, where electron discharging is followed by hole charging, has an important influence on the switching performance. In particular, the comparison of long-base and short-base IGBTs reveals, that a quicker formation of the neutral region within the resistive base region, as occurring in the long-base IGBT, leads to lower gatebottom-overlap capacitance, thus realizing faster electron discharging and hole charging of this overlap region.
In this paper, the susceptibility of a CMOS bandgap voltage reference (BGR) to external noise was investigated using an on-chip waveform monitor circuit in conjunction with circuit simulations. A Direct RF Power Injection method was employed for the immunity test of the BGR. Also, we evaluated the performance of the on-chip waveform monitor and analyze the BGR immunity using the on-chip monitor. As the results, we have clarified the mechanism of the BGR malfunction. The output voltage drop of the BGR was caused by the offset of operational amplifier in BGR.
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