Compact modeling and analysis of the Partially-Narrow-Mesa IGBT featuring low on-resistance and low switching loss

Miyaoku, Yosuke; Matsuura, Kai; Saito, Atsushi; Kikuchihara, Hideyuki; Mattausch, Hans Jürgen; Miura-Mattausch, Mitiko; Ikoma, Daisaku; Yamamoto, Takao A.

doi:10.1109/ispsd.2015.7123399

Cited by 8 publications

(3 citation statements)

References 5 publications

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“…To verify the applicability of the developed model, a specific modified IGBT structure, developed to improve the driving capability, which is called Partially-Narrow-Mesa IGBT (PNM-IGBT) [33], [34], is investigated. The specific feature of this PNM-IGBT is a longer extended bottom-gate length, as shown in Fig.…”

Section: Model Verification and Discussionmentioning

confidence: 99%

Compact Modeling of IGBT Charging/Discharging for Accurate Switching Prediction

Miyaoku

Tone

Matsuura

et al. 2020

IEEE J. Electron Devices Soc.

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The trench-type IGBT is one of the major devices developed for very high-voltage applications, and has been widely used for the motor control of EVs as well as for power-supply systems. In the reported investigation, the accurate prediction of the power dissipation of IGBT circuits has been analyzed. The main focus is given on the carrier dynamics within the IGBTs during the switching-off phase. It is demonstrated that discharging and charging at the IGBT's gate-bottom-overlap region, where electron discharging is followed by hole charging, has an important influence on the switching performance. In particular, the comparison of long-base and short-base IGBTs reveals, that a quicker formation of the neutral region within the resistive base region, as occurring in the long-base IGBT, leads to lower gatebottom-overlap capacitance, thus realizing faster electron discharging and hole charging of this overlap region.

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Section: Model Verification and Discussionmentioning

confidence: 99%

Compact Modeling of IGBT Charging/Discharging for Accurate Switching Prediction

Miyaoku

Tone

Matsuura

et al. 2020

IEEE J. Electron Devices Soc.

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“…Over the years, several effective solutions towards the enhancement of the electron injection at the cathode side of the IGBT structure have been proposed with examples including the IEGT (Injection Enhanced Gate Transistor) [1], the CSTBT (Carrier Store Trench Bipolar Transistor) [2], the Trench EST (Emitter Switched Thyristor) [3], the HiGT (High Conductivity IGBT) [4] and the Fin P-body IGBT [4]. More recently the authors have proposed the p-ring IGBT [5,6], where the bottom of the trench structures are covered by a p-doped layer in order to improve the on-state performance and reliability without affecting the device rating (fig.…”

Section: Introductionmentioning

confidence: 99%

The p-ring Trench Schottky IGBT: A solution towards latch-up immunity and an enhanced safe-operating area

Antoniou

Udrea

Lophitis

et al. 2020

2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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A novel Trench IGBT design, namely the p-ring Trench Schottky IGBT, with improved latch-up immunity and an enhanced safe-operating area is proposed. This design improves the performance of the FS+ IGBT by facilitating the collection of holes through a p-doped (p-ring) buried region connected through a Schottky contact to the source/cathode contact. This unique structure approach allows the improvement in the device reliability and it is shown under numerical studies to be highly effective in expanding the safe operating area (SOA), suppress dynamic avalanche, improving the latch up robustness and having the potential to improve the device switching operation.

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“…Silicon IGBTs still have the potential for their performance to surpass that of SiC or GaN devices, as suggested by Nakagawa. [10][11][12] To realize the silicon limit, narrow mesa IGBTs have been fabricated by forming a dielectric barrier (DB) 13) or partially narrow mesa (PNM) [14][15][16] between trench gates in an IGBT. V ON = 1.65 V at 500 A=cm 2 was exhibited by a prototype PNM-IGBT with a narrow trench gate (less than 100 nm wide).…”

Section: Introductionmentioning

confidence: 99%

Turn-on analysis of silicon insulated gate bipolar transistors with emitter trenches

Machida¹,

Yamashita²

2016

Jpn. J. Appl. Phys.

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In this study, we analyzed the turn-on of silicon insulated gate bipolar transistors (IGBTs) with an emitter trench. The tail of collector-to-emitter voltage during turn-on fluctuated when an emitter trench was inserted. Interestingly, the gate-to-collector capacitance of IGBTs with an emitter trench was lower than that without an emitter trench. The internal hole current distribution at the time of the tail of collector-to-emitter voltage was investigated by device simulation. The hole current was diverted, passing adjacent to the emitter trench. It was clarified that the fluctuation in the tail of collector-to-emitter voltage originates from a decrease in PNP transistor gain associated with this change of the hole current path. We demonstrated that this fluctuation in the tail of collector-to-emitter voltage can be suppressed by connecting the emitter trench to a gate electrode.

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Compact modeling and analysis of the Partially-Narrow-Mesa IGBT featuring low on-resistance and low switching loss

Cited by 8 publications

References 5 publications

Compact Modeling of IGBT Charging/Discharging for Accurate Switching Prediction

Compact Modeling of IGBT Charging/Discharging for Accurate Switching Prediction

The p-ring Trench Schottky IGBT: A solution towards latch-up immunity and an enhanced safe-operating area

Turn-on analysis of silicon insulated gate bipolar transistors with emitter trenches

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