The p-ring Trench Schottky IGBT: A solution towards latch-up immunity and an enhanced safe-operating area

Abstract

A novel Trench IGBT design, namely the p-ring Trench Schottky IGBT, with improved latch-up immunity and an enhanced safe-operating area is proposed. This design improves the performance of the FS+ IGBT by facilitating the collection of holes through a p-doped (p-ring) buried region connected through a Schottky contact to the source/cathode contact. This unique structure approach allows the improvement in the device reliability and it is shown under numerical studies to be highly effective in expanding the safe operating area (SOA), suppress dynamic avalanche, improving the latch up robustness and having the potential to improve the device switching operation.

Prediction of Static Characteristic Parameters of an Insulated Gate Bipolar Transistor Using Artificial Neural Network

“…Analysis of its static characteristic parameters has always been a key part of the design process, given that these parameters, such as on-state voltage (V on ) and threshold voltage (V th ), can characterize the conduction capability of the device [3,4]. In addition, breakdown voltage (BV), static latch-up voltage (V lu ), and static latch-up current density (J lu ) are helpful when evaluating the safe operating area of the device and its reliability [5][6][7]. Conventionally, technology computer-aided design (TCAD) simulation tools are used to obtain these characteristic parameters of the device before experimental testing because of the advantage of low prediction errors [1][2][3][4].…”