A polar conductor, where inversion symmetry is broken, may exhibit directional propagation of itinerant electrons, i.e., the rightward and leftward currents differ from each other, when time-reversal symmetry is also broken. This potential rectification effect was shown to be very weak due to the fact that the kinetic energy is much higher than the energies associated with symmetry breaking, producing weak perturbations. Here we demonstrate the appearance of giant nonreciprocal charge transport in the conductive oxide interface, LaAlO3/SrTiO3, where the electrons are confined to two-dimensions with low Fermi energy. In addition, the Rashba spin–orbit interaction correlated with the sub-band hierarchy of this system enables a strongly tunable nonreciprocal response by applying a gate voltage. The observed behavior of directional response in LaAlO3/SrTiO3 is associated with comparable energy scales among kinetic energy, spin–orbit interaction, and magnetic field, which inspires a promising route to enhance nonreciprocal response and its functionalities in spin orbitronics.

Heterointerfaces may exhibit unexpected physical properties distinct from intrinsic properties of component materials. In particular, metal–organic interfaces can drive unique interfacial spin moments, which are often called molecular spinterface. Here, van der Waals stacking of molecular layers may lead to variations in the intra/interlayer exchange coupling resulting in multiple ground states, which is highly desired for multifunctional magnetic devices. In this report, the emergence of molecular multispinterface of paramagnetic cobalt‐octaethyl‐porphyrin (CoOEP) layers in a Fe/CoOEP heterostructure is demonstrated through the interfacial layer and a successive antiferromagnetic molecular spin chain. The disentangled interfacial ferromagnetic spins lead to multiple magnetic ground states and behave as additional spin‐dependent scattering centers, as evidenced through the magnetotransport study. In addition, the antiferromagnetic molecule spin chain derives tunable exchange bias, which signifies the dominance of the antiferromagnetic interfacial interaction. Theoretical calculations demonstrate spin configurations of the molecular chain and the antiferromagnetic interfacial coupling through oxygen intermediaries. The development of the molecular multispinterface and controllable exchange bias therein will provide a promising route for the active control of multivalued data processing at the nanoscale.

Defect engineering is one of the key technologies in materials science, enriching the modern semiconductor industry and providing good test-beds for solid-state physics. While homogenous doping prevails in conventional defect engineering, various artificial defect distributions have been predicted to induce desired physical properties in host materials, especially associated with symmetry breakings. Here, we show layer-by-layer defect-gradients in two-dimensional PtSe2 films developed by selective plasma treatments, which break spatial inversion symmetry and give rise to the Rashba effect. Scanning transmission electron microscopy analyses reveal that Se vacancies extend down to 7 nm from the surface and Se/Pt ratio exhibits linear variation along the layers. The Rashba effect induced by broken inversion symmetry is demonstrated through the observations of nonreciprocal transport behaviors and first-principles density functional theory calculations. Our methodology paves the way for functional defect engineering that entangles spin and momentum of itinerant electrons for emerging electronic applications.

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The structural engineering of 2D layered materials is emerging as a powerful strategy to design catalysts for high‐performance hydrogen evolution reaction (HER). However, the ultimate test of this technology under typical operating settings lies in the reduced performance and the shortened lifespan of these catalysts. Here, a novel approach is proposed to design efficient and robust HER catalysts through out‐of‐plane deformation of 2D heterojunction using metal‐organic chemical vapor deposition. High‐yield, single‐crystalline WTe2 nanobelts are used as an epitaxial template for their coherent conversion to WS2. During the conversion process, the WTe2/WS2 heterostructure containing both lateral and vertical junctions are achieved by coherent heteroepitaxial stacking despite differences in symmetry. The lattice coherency drives out‐of‐plane deformation of heteroepitaxially grown WS2. The increase in the effective surface area and decrease in the electron‐transfer resistance across the 2D heterojunctions in turn enhances the HER performance as well as the long‐term durability of these electrocatalysts.