Slot die coating is a film casting process with a highly diverse variety of everyday applications. As a pre-metered process it not only guarantees excellent film uniformity, but is also suitable for simultaneously applied multilayer coatings. Characteristic singularities like the behavior of the liquid-liquid interface and the impact of the additional mid-lip on film uniformity were already investigated before. However, the effect of an altered gap pressure regime on commonly used coating windows has not yet been discussed. In this work, we therefore extended available single-layer coating windows for Newtonian and power-law liquids to the bilayer case. Here, the emphasis was laid on the air entrainment limit. Subsequently, the theoretical results were compared to experimental data. It was found that the onset of air entrainment strongly depends on the top to bottom film thickness ratio for bilayer coatings. A critical film thickness ratio which delivers similar coating limits as those for single-layer coatings was derived and confirmed by experimentally gained results.
Reducing channeling of B implants and transient enhanced diffusion (TED)is very critical for the formation of ultra shallow junctions required for deep sub-micron devices. As the ion energy required for junction formation is reduced (e5 keV) due to device shrinking, the use of high tilt angle (typically 7-10 deg) becomes ineffective in suppressing channeling. The formation of a thin amorphous layer close to the surface prior to B implant has shown to be very efficient in eliminating channeling. Such layers can be formed using a Ge' implant, and the thickness of the amorphous layers can be varied with Ge' ion energy and dose. In addition if optimized, Ge+ pre-amorphization implants (PAI) can also minimize the
TED of B by reducing the concentration of point defects generated by B implants. However, a Ge PA1 itself introduces point defects and can result in TED with sub keV B implants. This paper explores the limits and optimized conditions of Ge
PA1 prior to low energy B implants Cl keV) for the formation of junctions for deep sub-quarter micron devices.
Ultra shallow junctions <500 hi with steep profiles 4nmldecade are required for device technologies 50.13 pm as outlined by the recent ITRS Roadmap. For a $In junction such profiles can be obtained using sub-keV B ion implantation since both the projected range and more importantly the transient enhanced diffusion are significantly reduced at lower energies. State-of-the-art high current implanters utilize deceleration mode typically for sub 1 keV implantation in order to increase the beam current and production wafer throughput. Such a mode contains a very low level of energy contamination. This level is measured for sub keV B implants in the Quantum Leap and factors affecting the level of contamination are studied. Spike and soak annealing reduces the effect of the energy contamination on junction profile and depth. The effect of energy contamination on device performance such as Lff, VT and b s A~ is simulated using ISE TCAD. I.
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