Production-worthy shallow junction formation for sub-micron technologies using electron-volt ion implantation in the applied materials xR LEAP/sup TM/

Murrell, A.; Collart, E. J. H.; Foad, M.A.; Cock, G. De; Wagner, D.; Matsunaga, Y.

doi:10.1109/iit.1999.812090

Cited by 4 publications

(1 citation statement)

References 5 publications

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“…To correct this problem, Applied Materials has designed a better vacuum system with added cryo pumps to maintain a low operating pressure, and shortened the beamline to limit the number of neutrals impinging on the wafer [11]. However, there is still some neutral beam, which varies in intensity depending on the maintenance cycle of the cryo pumps.…”

Section: Shallow Ion Implantationmentioning

confidence: 99%

Low Energy Implantation of Boron with Decaborane Ions

et al. 2000

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Formation of p-type shallow junctions for future generations of Si devices will require ion implantation of B at very low energies (< 1 keV). An alternative to implantation of monomer ions at very low energy is implantation of large molecular ions at a higher energy. In an ion beam of decaborane (B10H14) each of the B atoms carries only 9% of the ion kinetic energy. We have examined ionization properties of decaborane and built an experimental ion source and an implantation apparatus with magnetic mass analysis. Analyzed decaborane ion beams with energies from 2 to 10 keV and beam currents of several microamperes were obtained. Si samples were implanted with decaborane ions and the implanted dose measured by current integration was compared with B content obtained by nuclear reaction analysis. Experiments with electrostatic beam deflection show that the large ions survive the transport in the implanter environment and that neutralization is negligible. During implantation, the retained B dose is reduced in comparison with the nominal implanted dose due to sputtering. Dose loss is greater at 200 eV compared to 500 eV. The properties of decaborane ion beams and the prospects of using them for shallow implantation of B into Si are discussed.

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Section: Shallow Ion Implantationmentioning

confidence: 99%