Highprecision automatic alignment procedure for vector scan ebeam lithography J. Vac. Sci. Technol. 15, 906 (1978); 10.1116/1.569625 High−precision skimmers for supersonic molecular beams Rev. Sci. Instrum. 46, 104 (1975);We measure the fluorescent alignment generated by ion bombardment of an Si0 2 wafer mark scanned behind a corresponding window pattern in a silicon stencil mask. We conclude that an optimized system can align to 50 nm (mean + 3!T) in less than 300 ms. Throughput is shown to be limited not by the alignment system, but by thermal loading of the mask during exposure.
The use of bio/chemiluminescence immunoassay (BL/CLI) technology for molecular and cellular characterization is rapidly evolving. The excellent selectivity of this method can be exploited to identify the presence and distribution of specific cells. Current work involves the advancement of the required methods and technologies for application to the analysis of vascular wall surfaces. In this effort, various enzymelinked antibodies are being explored which can be directed to cell surface antigens producing a luminogenic reaction. To aid in the analysis of this light emission, a custom high resolution digital imaging system which couples a multi-megapixel CCD with a specially designed image intensifier is under development. This intensifier system has high spatial resolution and excellent sensitivity in the wavelength region of the candidate BL/CL emissions. The application of this imaging system to BL/CLI requires unique performance characteristics and specialized optical design. Component level electro-optical tests of the imaging system will be presented along with design considerations for an eventual catheter based instrument. Initial in vitro experiments focused on the performance limits of the optical system in discriminating candidate luminogenic reactions. The main objective of these tests is the identification of suitable enzyme catalyzed systems for ultimate application to in vivo vascular tissue and cell diagnosis.
This paper describes recent developments in three areas ofmasked ion beam lithography (MIBL). These are 1) fabrication oflarge area, low distortion, silicon stencilmasks for demagnifying ion projection lithography, 2) fabrication ofstencil masks with nanometer scale resolution for 1:1 proximity printing, and 3) development of a direct method of alignment using the ion beam induced fluorescence of Si02. These topics are discussed below.Demagnifying ion projection masks: We describe the fabrication of stencil masks in large area, low stress (10 MPa), n-type silicon membranes. The projection masks have a silicon foil area 95 mm in diameter, thicknesses between 1.5-5 and resolution of0.6um. Measured distortion (3a) in the IPL masks ranges between 0.23gm and 0.65,um, with an experimental error of 0.20 1um.Proximity printing masks: A process is described for fabricating stencil masks with 50 nm resolution in low stress, n-type silicon membranes. Membranes less than 0.5 ,ttm thick are shown to be free of the sidewall taper that limits resolution in thicker masks. These thin membranes show a slightly flared profile due to the imperfectly collimated etching ions.Alignment: A direct method of alignment is being developed which uses the ion beam induced fluorescence of Si02 marks. Fluorescence yield is characterized as a function of ion energy and resist coating thickness. The yield for Si02 is in the range between 0.1-1.0 photons/proton, while the yields for Si, Al, and photoresist are negligibly small. Thus, a simple alignment technique can be implemented where registration of a grating in the mask with a corresponding oxide pattern is detected as a fluorescence maximum. A simple model predicts that 50 nm alignment can be accomplished, following a 1 im prealignment, in 2 seconds.
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