1991
DOI: 10.1116/1.585852
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High-precision motion and alignment in an ion-beam proximity printing system

Abstract: Highprecision automatic alignment procedure for vector scan ebeam lithography J. Vac. Sci. Technol. 15, 906 (1978); 10.1116/1.569625 High−precision skimmers for supersonic molecular beams Rev. Sci. Instrum. 46, 104 (1975);We measure the fluorescent alignment generated by ion bombardment of an Si0 2 wafer mark scanned behind a corresponding window pattern in a silicon stencil mask. We conclude that an optimized system can align to 50 nm (mean + 3!T) in less than 300 ms. Throughput is shown to be limited not by … Show more

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Cited by 13 publications
(5 citation statements)
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“…Medium patterning was accomplished using IBPL [11,24], a high-throughput direct write lithography where a large array of ion beamlets shaped by a stencil mask is used to write an arbitrary periodic device pattern as illustrated in membrane [25] and driven by four high-voltage operational amplifiers enable the deflection of the ion beamlets to obtain an arbitrary high density pattern. A 120 nm thick layer of hydrogen silsesquioxane (HSQ), a high-resolution negative tone resist [26] (Fox-12 from Dow Corning), was spun onto magnetic multilayer coated wafers and baked at 90 • C for 4 min before loading the wafer into the IBPL system.…”
mentioning
confidence: 99%
“…Medium patterning was accomplished using IBPL [11,24], a high-throughput direct write lithography where a large array of ion beamlets shaped by a stencil mask is used to write an arbitrary periodic device pattern as illustrated in membrane [25] and driven by four high-voltage operational amplifiers enable the deflection of the ion beamlets to obtain an arbitrary high density pattern. A 120 nm thick layer of hydrogen silsesquioxane (HSQ), a high-resolution negative tone resist [26] (Fox-12 from Dow Corning), was spun onto magnetic multilayer coated wafers and baked at 90 • C for 4 min before loading the wafer into the IBPL system.…”
mentioning
confidence: 99%
“…For this example, reliable cuff diameters are obtained between 70 and 250 µm. After the cuff is fabricated, and gently unrolled, the electrodes lines are printed using large depth-of-field ion beam lithography in a negative-tone resist [7]- [8]- [9]. A 110 nm thick gold (Au) film is then deposited by DC-magnetron sputtering.…”
Section: Resultsmentioning
confidence: 99%
“…Because of the high in-plane stiffness of the mask and the ability to align through the mask, pattern-placement errors were less than 60 nm using this technique. [13,14] Other innovations for patterning curved surfaces include combining step-and-flash imprint lithography [15±17] and ion beam proximity printing [18] on substrates having a diameter of 1 in. (1 inch = 2.54 cm) with features as small as 1.2 lm, [12] and the use of steerable micromirrors to pattern silicon spheres having a diameter of 1 mm with micrometer-scale features (www.ballsemi.com).…”
Section: Introductionmentioning
confidence: 99%