We report on the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the Pd/Ti/n-InP Schottky barrier diodes (SBDs) in the temperature range 160-400 K in steps of 40 K. The barrier heights and ideality factors of Schottky contact are found in the range 0.35 eV (I-V), 0.73 eV (C-V) at 160 K and 0.63 eV (I-V), 0.61 eV (C-V) at 400 K, respectively. It is observed that the zero-bias barrier height decreases and ideality factor n increase with a decrease in temperature, this behaviour is attributed to barrier inhomogeneities by assuming Gaussian distribution at the interface. The calculated value of series resistance (Rs) from the forward I-V characteristics is decreased with an increase in temperature. The homogeneous barrier height value of approximately 0.71 eV for the Pd/Ti Schottky diode has been obtained from the linear relationship between the temperature-dependent experimentally effective barrier heights and ideality factors. The zero-bias barrier height ( ) versus 1/2kT plot has been drawn to obtain evidence of a Gaussian distribution of the barrier heights and values of = 0.80 eV and = 114 mV for the mean barrier height and standard deviation have been obtained from the plot, respectively. The modified Richardson ln(I0/T2)- ( ) versus 1000/T plot has a good linearity over the investigated temperature range and gives the mean barrier height ( ) and Richardson constant (A*) values as 0.796 eV and 6.16 Acm-2K-2 respectively. The discrepancy between Schottky barrier heights obtained from I-V and C-V measurements is also interpreted
We have investigated the electrical and structural properties of Pt/Ti metallization scheme on n‐type InP as a function of annealing temperature using current–voltage (I–V), capacitance–voltage (C–V), Auger electron spectroscopy (AES), and X‐ray diffraction (XRD) measurements. Measurements showed that barrier height of as‐deposited Pt/Ti Schottky contact is 0.62 eV (I–V) and 0.76 eV (C–V). Experimental results indicate that high‐quality Schottky contact with barrier height and ideality factor of 0.66 eV (I–V), 0.80 eV (C–V), and 1.14 can be achieved after annealing at 400 °C for 1 min in N2 atmosphere. Further, it is observed that the barrier height slightly decreases to 0.55 eV (I–V) and 0.71 eV (C–V) after annealing at 500 °C. Norde method is also employed to calculate the barrier height of Pt/Ti Schottky contacts. The obtained values are in good agreement with those obtained by I–V measurements. These results indicate that the optimum annealing temperature for the Pt/Ti Schottky contact is 400 °C. According to AES and XRD analysis, the formation of indium phases at the Pt/Ti/n‐InP interface could be the reason for the increase of Schottky barrier height (SBH) after annealing at 400 °C. Results also showed the formation of phosphide phases at the interface. This may be the reason for the decrease in the barrier height after annealing at 500 °C. The AFM results showed that the overall surface morphology of Pt/Ti Schottky contact is reasonably smooth.
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