Admittance voltage characteristics of Si/79–227 Å SiO2/metal structures were measured in dark and under optical illumination in the frequency range of 30 Hz–100 kHz. For fabricating the structures, thermal oxidation was carried out in dry oxygen at 900 °C at 1 atm. The interface state versus band-gap energy profiles of the unannealed samples exhibited peaked distributions near the valence and conductance-band edges, overlying a concave background. The interface state density versus oxide thickness profile was observed to go through a minimum and a maximum instead of decreasing in a monotonic fashion.
Articles you may be interested inDispersive capacitance and conductance across the phase transition boundary in metal-vanadium oxide-silicon devices J. Appl. Phys. 106, 034101 (2009); 10.1063/1.3186024Fundamental connection between hydrogen/deuterium desorption at silicon surfaces in ultrahigh vacuum and at oxide/silicon interfaces in metal-oxide-semiconductor devices Evaluation of a dual bias dual metal oxidesilicon semiconductor field effect transistor detector as radiation dosimeter Med. Phys. 21, 567 (1994); 10.1118/1.597314 Low temperature electrical characterization of metalnitrided oxidesilicon field effect transistors
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.