The E and B subscripts are related to the emitter and base region, respectively.In equation (2), n is the ideality factorThe parameter values used in collector current simulation are presented in Table I. The material constants are from [11], except £B/£o which is from [12].
and V o is the junction built-in potentialAbstract-This work presents a new explanation of the abnormal injection phenomena at emitterbase junction of the silicon nitride passivated InP-based heterojunction bipolar transistors. We have suggested that the emitter mesa sidewall is accumulated and that thermionic field emission from this zone becomes the principal component of the collector current. The proposed theoretical model is in good agreement with experimental collector current Gummel plots and with atomic force microscopy measurements of mesa emitter edge.(4) (7) (6) (5) Richardson velocity for emitter electrons is given by A;T 2 m:,E V nE = ----, , qNC,E m o where A o * is Richardson constant for free electrons A; = 120 (A 1cm 2 • K 2 ).Base transport factor, aT can be calculated from maximum value of d.c. common-emitter current gain,~max 1~max aT = cosh(w B 1L B ) = I+~max .
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