With a new method, the .ratio of the thermal emission probabilities of the carriers a t the acceptor level E, ( E , -0.39 eV) induced in silicon by fast neutron irradiation, e,/ep = 500 at 300 K, and t h e defect introduction rate, 7 = 3.2 cm-l, are determined. These results are used for designing a silicon detector with p+-n diffused junction used for the spectrometry and dosimetry of fast neutrons for medical and biological purposes. HOBbIM MeTOnOM OIIpenenHmTCR COOTHOUleHHe BePOHTHOCTeB TeIlJIOBOfi 3MMCCMH HOCM-Teneii Ha aH~eHTOpHOM YpOBHe E, ( E , -0,39 ev), BBeAeHHbIM M3JIyseHMeM 6bICTPbIMH HefiTPOHaMH, en/ep = 500 IIPM 300 K, M CKOPOCTb BBeneHMH ne@eIcTOB ' Y) = 3.2 Cm-'. 3 T M pe3yJIbTaTbI HCIIOJIb30BaJIMCb nJlR IIpOeKTHpOBaHHR IcpeMHMeBOrO nH@@Y3HOHHOrO p+-n HeTeRTOpa, yIIOTpe6JIeHHbIM nJIH CIIeKTpOMeTpMH M H03MMeTpHH 6bICTPbIX HeiiTPOHOB B M~~H K O -~M O J I O~M~~C K M X npMKnanHbxx aanasax.
We obtained a multilayer heteroepitaxial structure of Ino 53 Ga0.47 As-type deposed on (1 00) oriented InP substrate. We selected deliberately different thickness and doping concentrations of each layer for their potential applications in very high frequency bipolar transistors. A sequence of six epilayers were realized by vapour phase epitaxy. The characterization of crystallographic and semiconducting properties in correlation with technological processes is performed by TSC-method and by double crystal X-ray diffraction. We propose a kinematics model of X-ray diffraction in heteroepitaxial multilayer structures of InPAnGaAs . It is based on a discontinuous lattice misfit and elastic strain distribution. The model fits well the rocking curves obtained for both (004) and (224) reflecting planes. The values of the lattice misfit and the elastic strains in the plane of lamellae were calculated.
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