The influence of deep level defects (DLs) on the conversion efficiency of
multicrystalline Si-based standard solar cells (SCs) is investigated.
Multicrystalline p-type Si wafers with 156×156 mm dimensions and 200
μm thickness were used for SCs preparation. Three types of SCs with
conversion efficiency 10%, 16.8% and 20.4% were studied using capacitance
voltage characteristics method (C-V) and by current deep level transient
spectroscopy (I-DLTS). The correlation between the total concentration of DLs
and the values of the SCs conversion efficiency is found.
The influence of deep level defects lateral distribution in active layers of multicrystalline Si-based standard solar cells is investigated. Multicrystalline p-type Si wafers with 156×156 mm dimensions and 200 μm thickness were used for SCs preparation. One type of solar cells with conversion efficiency 20.4% was studied using capacitance voltage characteristics method (C-V) and by current deep level transient spectroscopy (I-DLTS). From various places along the diagonal of solar cell’s substrate with 20.4% efficiency nine pieces with an area ∼20 mm2 were extracted and studied. I-DLTS spectra of the five pieces from solar cell were measured. The features of deep levels defects concentration lateral distribution along the SC’s surface were studied.
A universal combined apparatus is described, which allows investigations of magnetic quantum effects in 3D and 2D semiconductor structures under the influence of optical and microwave radiation on samples in the Faraday and Voight geometries and the recording of the derivatives of the transmission and reflection coefficients of the radiation power under smooth changes in the quantizing magnetic field in a wide temperature range of a studied sample. The vacuum cell of a Janis CCS 400/204N helium cryostat, which is included in the apparatus, has two cold demountable CaF 2 windows that serve for probing IR radiations with different wavelengths. The apparatus provides the determination of the following characteristics: the concen tration and g factor of free charge carriers (FCCs) in semiconductor structures from Shubnikov-De Haas (SDH) oscillation periods and from the positions of the peaks of nonlinear spin resonance curves; the mobil ity and relaxation time of a FCC pulse, from the cyclotron resonance curves with an accuracy of 0.5-1%; and the concentration profiles of FCCs and the parameters of electrically active electron levels and deep cen ters, using the admittance spectroscopy method.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.