Sheet resistance, Hall mobility, and effective carrier concentration as a function of annealing parameters for boron or phosphorus ion implanted films of polycrystalline Si, Si0.75Ge0.25, and Si0.50Ge0.50 films are presented. The films were ion implanted with boron or phosphorus at dosages between 5×1014 and 4×1015 cm−2, and then thermally annealed between 550 and 650 °C from 0.25 to 120 min. Boron doped films showed decreasing minimum sheet resistance with increasing Ge fraction, while phosphorus doped films exhibited the reverse trend. Both boron and phosphorus doped films showed minima as a function of anneal time. This is attributed to the competing processes of damage annealing versus dopant segregation. Poly-Si0.50Ge0.50 films achieved minimum resistance faster than poly-Si films, and the lowest sheet resistances were measured in boron doped, poly-Si0.50Ge0.50 films.

Copper profile evolution in ultralarge scale integration via and trench structures was investigated for thermal low pressure, low temperature, chemical vapor deposition (LPCVD) from CuI(tmvs)(hfac). The investigation examined copper profiles in specialized cantilever structures as a function of systematic changes in key processing conditions, namely, substrate temperature, precursor flux, and hydrogen reactant flow. Resulting experimental observations from cross section scanning electron microscopy were incorporated in a fast analytical simulator, using a two-dimensional adsorption/re-emission model, to simulate copper profile evolution. The deposition profiles were simulated using a single rate limiting precursor model. A comparison of simulation results and actual experimental profiles for thermal LPCVD copper showed that species re-emission within the via and trench structures play a critical role in achieving conformal step coverage and complete filling. In additional, precursor flux and substrate temperature were identified as the dominant parameters in the species re-emission process, with the probability for re-emission being inversely proportional to substrate temperature and directly proportional to precursor flux. The results of this study were employed in the development of an optimum LPCVD process window for complete copper filling of aggressive via and trench structures at growth rates above 2000 Å/min and as-deposited resistivity below 2.0 μΩ cm.

Formation of shallow source/drain extensions for metal-oxide-semiconductor field-effect-transistors by antimony implantation Appl. Phys. Lett. 82, 826 (2003); 10.1063/1.1542932Device performance of in situ steam generated gate dielectric nitrided by remote plasma nitridationIn this article we review the characteristics of ultrashallow junctions produced by plasma doping ͑PLAD͒. PLAD is one of the alternate doping techniques being developed for sub-0.18 m devices. Here, we describe results from a wide range of experiments aimed at the production of ultrashallow junctions. For the results shown here, a BF 3 plasma was used to provide the dopant ions that were implanted into 150 and 200 mm Si substrates using wafer biases ranging from Ϫ0.14 to Ϫ5.0 kV. The ultrashallow junctions formed with this technique have been examined with both secondary ion mass spectrometry and electrical profiling techniques. Good sheet resistance uniformity, charging performance, structural quality, and photoresist integrity have been obtained. When PLAD is used in the production of sub-0.2 m gate length p-metal-oxide-semiconductor field effect transistors, one finds subthreshold swing, off-state leakage, and hot-carrier reliability that are similar to beamline-implanted ones. In addition, higher drive currents are seen in the plasma-doped devices.

In this paper, we report performance and reliability of sub-lOOnm MOSFETs with ultra thin direct tunneling (DT) gate oxides. Both pure oxides and nitrided oxides down to 17A were investigated. For a L, of about 90nm (Leff of about 50nm), a drive current of larger than 1.OmAIpm and a transconductance of higher than 800mSImm were obtained at room temperature. Channel electron transport properties were investigated. High field mobility degradation with decrease of oxide thickness and subsequent improvement with use of nitrided oxides were observed. Reliability characteristics such as gate leakage, stress-induced-leakage, and hot-carrier degradation are described. A new mechanical stress induced leakage phenomenon for ultra thin DT oxides was revealed.

TiN PVD and CVD models have been incorporated in the SPEEDIE topography simulator. A parameter extraction methodology is presented which allows engineers to locally calibrate their process to the SPEEDIE simulator. The calibration requires no special equipment or modifications to the PVD or CVD equipment. Parameter extraction is demonstrated with Applied Materials deposition equipment.