Plasma doping for shallow junctions

Goeckner, Matthew; Felch, S.B.; Fang, Ziwei; Lenoble, D.; Galvier, J.; Grouillet, A.; Yeap, Gary; Bang, D.S.; Lin, Mou-shiun

doi:10.1116/1.590906

Cited by 32 publications

(13 citation statements)

References 5 publications

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“…As conventional implanters are not adapted to very low ion energies, implantation of doping elements via PBII processing with a collisional sheath is becoming a useful tool for shallow implantation. Plasma doping (or PLAD) thus constitutes, by far, the most important application of PBII in microelectronics [10,21,23,[126][127][128][129][130][131][132][133][134], along with the production of SOI (silicon on insulator) wafers with the smart-cut process [135][136][137][138].…”

Section: Plasma Dopingmentioning

confidence: 99%

Plasma-based ion implantation and deposition: a review of physics, technology, and applications

Pelletier

Anders

2005

IEEE Trans. Plasma Sci.

169

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After pioneering work in the 1980s, plasma-based ion implantation (PBII) and plasma-based ion implantation and deposition (PBIID) can now be considered mature technologies for surface modification and thin film deposition. This review starts by looking at the historical development and recalling the basic ideas of PBII. Advantages and disadvantages are compared to conventional ion beam implantation and physical vapor deposition for PBII and PBIID, respectively, followed by a summary of the physics of sheath dynamics, plasma and pulse specifications, plasma diagnostics, and process modelling. The review moves on to technology considerations for plasma sources and process reactors. PBII surface modification and PBIID coatings are applied in a wide range of situations. They include the by-now traditional tribological applications of reducing wear and corrosion through the formation of hard, tough, smooth, low-friction and chemically inert phases and coatings, e.g. for engine components. PBII has become viable for the formation of shallow junctions and other applications in microelectronics. More recently, the rapidly growing field of biomaterial synthesis makes used 1 of PBII&D to produce surgical implants, bio-and blood-compatible surfaces and coatings, etc.With limitations, also non-conducting materials such as plastic sheets can be treated. The major interest in PBII processing originates from its flexibility in ion energy (from a few eV up to about 100 keV), and the capability to efficiently treat, or deposit on, large areas, and (within limits) to process non-flat, three-dimensional workpieces, including forming and modifying metastable phases and nanostructures.We use the acronym PBII&D when referring to both implantation and deposition, while PBIID implies that deposition is part of the process.2

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Section: Plasma Dopingmentioning

confidence: 99%

Plasma-based ion implantation and deposition: a review of physics, technology, and applications

Pelletier

Anders

2005

IEEE Trans. Plasma Sci.

169

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“…1, in situ ellipsometry was used to measure and characterize the effect that chamber dimension has on the etching of SiO 2 . 13 These include SiF 4 , COF 2 , CF 2 , CF 3 , and CF 4 . For preprocess film thickness measurements, the samples were scanned from 250 to 800 nm in increments of 10 nm and modeled using a simple SiO 2 on c-Si two-layer model.…”

Section: Methodsmentioning

confidence: 99%

Role of chamber dimension in fluorocarbon based deposition and etching of SiO2 and its effects on gas and surface-phase chemistry

Joseph

Zhou

Sant

et al. 2008

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Relationship between gas-phase chemistries and surface processes in fluorocarbon etch plasmas: A process rate model Effect of plasma interactions with low-κ films as a function of porosity, plasma chemistry, and temperature J.It is well understood that chamber geometry is an influential factor governing plasma processing of materials. Simple models suggest that a large fraction of this influence is due to changes in basic plasma properties, namely, density, temperature, and potential. However, while such factors do play an important role, they only partly describe the observed differences in process results. Therefore, to better elucidate the role of chamber geometry in this work, the authors explore the influence of plasma chemistry and its symbiotic effect on plasma processing by decoupling the plasma density, temperature, and potential from the plasma-surface ͑wall͒ interactions. Specifically, a plasma system is used with which the authors can vary the chamber dimension so as to vary the plasma-surface interaction directly. By varying chamber wall diameter, 20-66 cm, and source-platen distance, 4 -6 cm, the etch behavior of SiO 2 ͑or the deposition behavior of fluorocarbon polymer͒ and the resulting gas-phase chemistry change significantly. Results from in situ spectroscopic ellipsometry show significant differences in etch characteristics, with etch rates as high as 350 nm/ min and as low as 75 nm/ min for the same self-bias voltage. Fluorocarbon deposition rates are also highly dependent on chamber dimension and vary from no net deposition to deposition rates as high as 225 nm/ min. Etch yields, however, remain unaffected by the chamber size variations. From Langmuir probe measurements, it is clear that chamber geometry results in significant shifts in plasma properties such as electron and ion densities. Indeed, such measurements show that on-wafer processes are limited at least in part by ion flux for high energy reactive ion etch. However, in situ multipass Fourier transform infrared spectroscopy reveals that the line-averaged COF 2 , SiF 4 , CF 2 , and CF 3 gas-phase densities are also dependent on chamber dimension at high self-bias voltage and also correlate well to the CF x overlayer stoichiometry under deposition conditions.

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“…Certains de ces problèmes peuvent être résolus par la technique de dopage plasma, actuellement en cours de développement [4]. Elle consiste à placer la tranche de silicium à proximité d'un plasma créé à partir d'un gaz dopant.…”

Section: Evolution De La M1croelectronique Silicium Et Dopage Ultra-munclassified

Dopage laser pour la microélectronique du futur

et al. 2001

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Résumé: La microélectronique sur silicium continuera à évoluer, dans les 10 à 15 ans qui viennent, vers des degTés d'intégration et de complexité de plus en plus importants. Cette évolution implique une réduction continue des dimensions du transistor MOSFET, dont la largeur de grille ne sera plus, dans une dizaine d'années, que de 50 nm. Pour suivre cette évolution, il faut être capable de réaliser des jonctions de plus en plus minces (jusqu'à ~ 10 nm pour une largeur de grille de 50 nm), avec des concentrations en dopants actifs de plus en plus élevées et des profils de plus en plus abrupts. Les techniques de dopage habituelles, basées sur une implantation ionique suivie d'un recuit thermique, rencontrent de grandes difficultés pour atteindre ces performances. Nos expériences montrent que la technique de dopage laser offre une solution très intéressante à la réalisation de jonctions ultra-fines. EVOLUTION DE LA M1CROELECTRONIQUE SILICIUM ET DOPAGE ULTRA-MINCELa progression exponentielle des performances de la microélectronique sur silicium suit la loi de Moore depuis une trentaine d'années: réduction des dimensions des composants élémentaires, augmentation du nombre de transistors par circuit, accroissement de la complexité et de la rapidité des systèmes intégrés. L'International Technology Roadmap for Semiconductors (ITRS) [1] prévoit que cette progression persistera encore dans les 10 à 15 ans à venir. Cette évolution entraîne inéluctablement la microélectronique vers le monde des nanotechnologies et implique l'avènement de nouveaux concepts, matériaux, dispositifs et technologies. Cependant, l'élément de base de la microélectronique restera encore pendant des années le transistor MOSFET dont les dimensions continueront à diminuer inexorablement. La largeur de grille du MOSFET, qui sert de référence pour qualifier le niveau atteint par la technologie dans la réduction des dimensions, est aujourd'hui de « 180 nm. Selon les prévisions de l'ITRS, elle ne sera plus que de » 100 nm en 2005, et de 35 nm en 2014. Pour qu'un tel transistor puisse fonctionner avec les performances attendues, il reste une somme énorme de problèmes physiques et technologiques à résoudre.L'un des verrous technologiques soulignés par l'ITRS est la formation de jonctions ultra-fines correspondant aux extensions de la source et du drain du MOSFET. Ces extensions jouent un rôle capital sur le fonctionnement du transistor. En effet, la réduction des effets dus au raccourcissement du canal de conduction, la minimisation des résistances série ou parasites ainsi que des courants de fuite, imposent des contraintes drastiques sur le dopage de la source et du drain, et, tout particulièrement, de leurs extensions [1,2]. Selon les projections de l'ITRS pour 2014, les épaisseurs de ces extensions devront diminuer jusqu'à ~ 10 nm, leur résistivité superficielle devra être inférieure à 400 fî/Q, avec des profils aussi carrés et abrupts que possible et des gradients qui devront devenir inférieurs au nm/décade. Ces caractéristiques impliquent des concentr...

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Plasma doping for shallow junctions

Cited by 32 publications

References 5 publications

Plasma-based ion implantation and deposition: a review of physics, technology, and applications

Plasma-based ion implantation and deposition: a review of physics, technology, and applications

Role of chamber dimension in fluorocarbon based deposition and etching of SiO2 and its effects on gas and surface-phase chemistry

Dopage laser pour la microélectronique du futur

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