The electromigration threshold in copper interconnect is reported in this paper. The critical product (jL) c is first determined for copper oxide interconnects with temperature ranging from 250 • C to 350 • C from package-level experiments. It is shown that the product does not significantly change in this temperature range. Then, (jL) c was extracted for copper low-k dielectric (k = 2.8) interconnects at 350 • C. A larger value than that for oxide dielectric was found. Finally, a correlation between the n values from Black's model and with jL conditions was established for both dielectrics.
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