This paper presents a comprehensive experimental study of the static and dynamic characteristics of self-aligned vertical SiGeC HBTs fabricated on CMOS compatible, thin film SOI substrates. In particular, the influence of collector doping and layout on the performance of fullydepleted transistors is described in details. The potentiality of partially-depleted SOI HBTs for high speed applications is also demonstrated, with cut-off frequencies f T = 102GHz and f MAX = 154GHz reported here for the first time.
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