We report on GaAs-based broad area (100 µm) 1.3 µm quantum dot (QD) lasers with high CW output power (5 W) and wall-plug efficiency (56%). The reliability of the devices has been demonstrated beyond 3000 h of CW operation at 0.9 W and 40 • C heat sink temperature with 2% degradation in performance. P-doped QD lasers with a temperature-insensitive threshold current (T 0 > 650 K) and differential efficiency (T 1 = infinity) up to 80 • C have been realized.
We report on a quantum dot laser having an emission spectrum as broad as 74.9 nm at 25 degrees C in the 1.2-1.28 wavelength interval with a total pulsed output power of 750 mW in single lateral mode regime and the average spectral power density of >10 mW/nm. A significant overlap and approximate equalization of the ground-state and the excited-state emission bands in the laser's spectrum is achieved by means of intentional inhomogeneous broadening of the quantum dot energy levels.
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