A PRAM cell with great scalability and high speed operation capability with excellent reliability below 20nm technology was demonstrated. This has the meaning of the potential applicable to the technology area of scaling limitation of DRAM cell.We fabricated a confined PRAM cell with 7.5nmx17nm of below 4F 2 . In particular, Sb-rich Ge-Sb-Te phase change material was employed for high speed operation below 30nsec. The excellent writing endurance performance was predicted to maintain up to 6.5E15cycles by reset program energy acceleration. Its data retention was 4.5 years at 85 o C which is enough for DRAM application.

Complementary metal–oxide–semiconductor (CMOS) colour image sensors are representative examples of light-detection devices. To achieve extremely high resolutions, the pixel sizes of the CMOS image sensors must be reduced to less than a micron, which in turn significantly limits the number of photons that can be captured by each pixel using silicon (Si)-based technology (i.e., this reduction in pixel size results in a loss of sensitivity). Here, we demonstrate a novel and efficient method of increasing the sensitivity and resolution of the CMOS image sensors by superposing an organic photodiode (OPD) onto a CMOS circuit with Si photodiodes, which consequently doubles the light-input surface area of each pixel. To realise this concept, we developed organic semiconductor materials with absorption properties selective to green light and successfully fabricated highly efficient green-light-sensitive OPDs without colour filters. We found that such a top light-receiving OPD, which is selective to specific green wavelengths, demonstrates great potential when combined with a newly designed Si-based CMOS circuit containing only blue and red colour filters. To demonstrate the effectiveness of this state-of-the-art hybrid colour image sensor, we acquired a real full-colour image using a camera that contained the organic-on-Si hybrid CMOS colour image sensor.

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Ultrafast organic diodes with low turn-on voltage based on a junction between C60 and WO3 are proposed. The high electron mobility of C60 layers and the optimal work function of hexamethyldisilazane (HMDS)-treated WO3 layers together provide ideal diode characteristics including high rectification ratio and low turn-on voltage. Ultrahigh frequency (UHF) compatible rectifiers with a low voltage drop are demonstrated with the C60/WO3 diodes.

Although high‐quality graphene can be produced on catalyst metals, their practical applications, especially Si technologies, are limited by the high‐temperature growth and the posttransfer process. A high‐performance system composed of W/nanocrystalline graphene (nc‐G)/TiN is realized for the long‐term downscaling of interconnect technology. The nc‐G is directly grown on noncatalytic TiN, up to 300 mm in diameter, at a low temperature of ≈560 °C, which is below the complementary metal‐oxide semiconductor integration temperature. The versatile roles of nc‐G in the interconnect are demonstrated: as a promoter of the preferential grain growth of the W layer, as a diffusion barrier to metal‐silicide formation, and as a proper adhesion layer with adjacent layers. Overall, a significant reduction (27%) in the resistance of the interconnect is achieved by the insertion of nc‐G between W and TiN. This work points to the possibility of practical graphene applications via direct nc‐G growth that is compatible with current Si technology.