A PRAM cell with great scalability and high speed operation capability with excellent reliability below 20nm technology was demonstrated. This has the meaning of the potential applicable to the technology area of scaling limitation of DRAM cell.We fabricated a confined PRAM cell with 7.5nmx17nm of below 4F 2 . In particular, Sb-rich Ge-Sb-Te phase change material was employed for high speed operation below 30nsec. The excellent writing endurance performance was predicted to maintain up to 6.5E15cycles by reset program energy acceleration. Its data retention was 4.5 years at 85 o C which is enough for DRAM application.

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CVD-Ru represents a critically important class of materials for BEOL interconnects that provides Cu reflow capability. The results reported here include superior gap-fill performance, a solution for plausible integration issues, and robust EM / TDDB properties of CVD-Ru / Cu reflow scheme, by iterative optimization of process parameters, understanding of associated Cu void generation mechanism, and reliability failure analysis, thereby demonstrating SRAM operation at 10 nm node logic device and suggesting its use for future BEOL interconnect scheme.

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