Fabrication of Metal/Graphene Hybrid Interconnects by Direct Graphene Growth and Their Integration Properties

Abstract

Although high‐quality graphene can be produced on catalyst metals, their practical applications, especially Si technologies, are limited by the high‐temperature growth and the posttransfer process. A high‐performance system composed of W/nanocrystalline graphene (nc‐G)/TiN is realized for the long‐term downscaling of interconnect technology. The nc‐G is directly grown on noncatalytic TiN, up to 300 mm in diameter, at a low temperature of ≈560 °C, which is below the complementary metal‐oxide semiconductor integration temperature. The versatile roles of nc‐G in the interconnect are demonstrated: as a promoter of the preferential grain growth of the W layer, as a diffusion barrier to metal‐silicide formation, and as a proper adhesion layer with adjacent layers. Overall, a significant reduction (27%) in the resistance of the interconnect is achieved by the insertion of nc‐G between W and TiN. This work points to the possibility of practical graphene applications via direct nc‐G growth that is compatible with current Si technology.

Rational Design of Holey 2D Nonlayered Transition Metal Carbide/Nitride Heterostructure Nanosheets for Highly Efficient Water Oxidation

“…To manipulate the 2D anisotropic growth, various bottom‐up methods have been attempted. For example, several researches have been focusing on opening up efficient routes to obtain 2D nonlayered simple and mixed transition metal oxides, selenides, chalcogenides, organic–inorganic hybrid perovskites, and metal/NC . Recently, a fast “gel‐blowing” strategy was proposed for the mass production of 2D nonlayered materials, including metal oxides/metals and/or those supported on the nitrogen‐doped carbon, which show significant enhancement in performance of catalysis and energy storage .…”

Graphene-Based Etch Resist for Semiconductor Device Fabrication

“…High-quality graphene with low O and defect concentrations can be grown on catalyst metals at high temperatures (∼1100 °C) by using CVD; however, the high deposition temperature and use of catalyst metals limit its practical applicability as a etch resist. Here, we prepared wafer-scale nanocrystalline graphene (nc-G) films directly on SiO 2 via inductively coupled plasma (ICP)-CVD. Figure A shows a photograph of the direct-deposited nc-G film on a 6 in. SiO 2 wafer.…”

In Situ Scanning Transmission Electron Microscopy Study of MoS2 Formation on Graphene with a Deep-Learning Framework

“…In recent years, researchers have explored two-dimensional (2D) materials and their heterostructures, focusing on their layered structure and unique properties that seem promising for future applications, including field-effect transistors, diffusion barriers, liners, sensors, batteries, and optoelectronic devices. − The nanostructures of 2D materials, such as atomic defects, edge configuration, and domain size, impact their physical and chemical properties and applications. Therefore, information about the nanostructure of 2D materials is essential for understanding and designing the required properties for a dedicated application.…”