Electrical metal contacts to two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDCs) are found to be the key bottleneck to the realization of high device performance due to strong Fermi level pinning and high contact resistances (R). Until now, Fermi level pinning of monolayer TMDCs has been reported only theoretically, although that of bulk TMDCs has been reported experimentally. Here, we report the experimental study on Fermi level pinning of monolayer MoS and MoTe by interpreting the thermionic emission results. We also quantitatively compared our results with the theoretical simulation results of the monolayer structure as well as the experimental results of the bulk structure. We measured the pinning factor S to be 0.11 and -0.07 for monolayer MoS and MoTe, respectively, suggesting a much stronger Fermi level pinning effect, a Schottky barrier height (SBH) lower than that by theoretical prediction, and interestingly similar pinning energy levels between monolayer and bulk MoS. Our results further imply that metal work functions have very little influence on contact properties of 2D-material-based devices. Moreover, we found that R is exponentially proportional to SBH, and these processing parameters can be controlled sensitively upon chemical doping into the 2D materials. These findings provide a practical guideline for depinning Fermi level at the 2D interfaces so that polarity control of TMDC-based semiconductors can be achieved efficiently.

Devices in which a single strand of DNA is threaded through a nanopore could be used to efficiently sequence DNA. However, various issues will have to be resolved to make this approach practical, including controlling the DNA translocation rate, suppressing stochastic nucleobase motions, and resolving the signal overlap between different nucleobases. Here, we demonstrate theoretically the feasibility of DNA sequencing using a fluidic nanochannel functionalized with a graphene nanoribbon. This approach involves deciphering the changes that occur in the conductance of the nanoribbon as a result of its interactions with the nucleobases via π-π stacking. We show that as a DNA strand passes through the nanochannel, the distinct conductance characteristics of the nanoribbon (calculated using a method based on density functional theory coupled to non-equilibrium Green function theory) allow the different nucleobases to be distinguished using a data-mining technique and a two-dimensional transient autocorrelation analysis. This fast and reliable DNA sequencing device should be experimentally feasible in the near future.

Atomically thin two-dimensional (2D) materialssuch as transition metal dichalcogenide (TMD) monolayers and hexagonal boron nitride (hBN)and their van der Waals layered preparations have been actively researched to build electronic devices such as field-effect transistors, junction diodes, tunneling devices, and, more recently, memristors. Twodimensional material memristors built in lateral form, with horizontal placement of electrodes and the 2D material layers, have provided an intriguing window into the motions of ions along the atomically thin layers. On the other hand, 2D material memristors built in vertical form with top and bottom electrodes sandwiching 2D material layers may provide opportunities to explore the extreme of the memristive performance with the atomic-scale interelectrode distance. In particular, they may help push the switching voltages to a lower limit, which is an important pursuit in memristor research in general, given their roles in neuromorphic computing. In fact, recently Akinwande et al. performed a pioneering work to demonstrate a vertical memristor that sandwiches a single MoS 2 monolayer between two inert Au electrodes, but it could neither attain switching voltages below 1 V nor control the switching polarity, obtaining both unipolar and bipolar switching devices. Here, we report a vertical memristor that sandwiches two MoS 2 monolayers between an active Cu top electrode and an inert Au bottom electrode. Cu ions diffuse through the MoS 2 double layers to form atomic-scale filaments. The atomic-scale thickness, combined with the electrochemical metallization, lowers switching voltages down to 0.1−0.2 V, on par with the state of the art. Furthermore, our memristor achieves consistent bipolar and analogue switching, and thus exhibits the synapse-like learning behavior such as the spike-timing dependent plasticity (STDP), the very first STDP demonstration among all 2D-material-based vertical memristors. The demonstrated STDP with low switching voltages is promising not only for low-power neuromorphic computing, but also from the point of view that the voltage range approaches the biological action potentials, opening up a possibility for direct interfacing with mammalian neuronal networks.

Recently, as applications based on triboelectricity have expanded, understanding the triboelectric charging behavior of various materials has become essential. This study investigates the triboelectric charging behaviors of various 2D layered materials, including MoS , MoSe , WS , WSe , graphene, and graphene oxide in a triboelectric series using the concept of a triboelectric nanogenerator, and confirms the position of 2D materials in the triboelectric series. It is also demonstrated that the results are obviously related to the effective work functions. The charging polarity indicates the similar behavior regardless of the synthetic method and film thickness ranging from a few hundred nanometers (for chemically exfoliated and restacked films) to a few nanometers (for chemical vapor deposited films). Further, the triboelectric charging characteristics could be successfully modified via chemical doping. This study provides new insights to utilize 2D materials in triboelectric devices, allowing thin and flexible device fabrication.

Spintronic devices are very important for futuristic information technology. Suitable materials for such devices should have half-metallic properties so that only one spin passes through the device. In particular, organic half metals have the advantage that they may be used for flexible devices and have a long spin-coherence length. We predict that the one-dimensional infinite chromium porphyrin array, which we call Cr-PA(∞), shows half-metallic behavior when the spins on the chromium atoms are in a parallel alignment. Since the chromium atoms are separated by a large distance (>8 Å), the coupling between spins is small and thus their directions can be readily controlled by an external magnetic field. In the ferromagnetic state, the band gap for major spin electrons is 0.30 eV, while there is no band gap for the minor spin electrons, thus reflecting the half-metallic property. This unique property originates from the high spin state of Cr which results in the spin asymmetry of the conduction band in Cr-PA(∞). Electron transport of Cr-PA(1,2,3) is calculated with the nonequilibrium Green function technique in the presence of Au electrodes. It turned out that the spin-filtering ability appears from the dimeric Cr-PA(2). Thus, a new organometallic framework for designing a spin filter is proposed. Though many others have designed novel spintronic devices, none of them are realized due to the lack of a practical fabrication method at present. However, the porphyrin-based spintronic device provides a synthesizable framework.